BCV64B,215 NXP Semiconductors, BCV64B,215 Datasheet - Page 6

• Manufacturer Part Number: BCV64B,215
• Description: TRANS PNP 30V 100MA DUAL SOT143B
• Manufacturer: NXP Semiconductors

Specifications of BCV64B,215

• Package / Case: SOT-143, SOT-143B, TO-253AA
• Transistor Type: 2 PNP (Dual)
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 30V, 6V
• Vce Saturation (max) @ Ib, Ic: 650mV @ 5mA, 100mA / 250mV @ 5mA, 100mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 220 @ 2mA, 5V / 220 @ 2mA, 700mV
• Power - Max: 250mW
• Frequency - Transition: 100MHz
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 65 C
• Configuration: Dual
• Transistor Polarity: PNP
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 30 V at TR1, 6 V at TR2
• Emitter- Base Voltage Vebo: 6 V
• Maximum Dc Collector Current: 0.1 A
• Power Dissipation: 250 mW
• Maximum Operating Frequency: 100 MHz at TR1
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 933835240215; BCV64B T/R; BCV64B T/R

NXP Semiconductors
8. Application information
9. Test information
BCV64B
Product data sheet
9.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
Fig 5.
Schmitt trigger application
All information provided in this document is subject to legal disclaimers.
Rev. 4 — 2 August 2010
TR2
R c
1
3
R2
V
i
4
PNP general-purpose double transistor
R1
TR1
2
3
R c
mgd828
V
o
© NXP B.V. 2010. All rights reserved.
BCV64B
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