CA3083Z Intersil, CA3083Z Datasheet

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CA3083Z

Manufacturer Part Number
CA3083Z
Description
TRANSISTOR ARRAY NPN 16-PDIP
Manufacturer
Intersil
Datasheets

Specifications of CA3083Z

Transistor Type
5 NPN
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
15V
Vce Saturation (max) @ Ib, Ic
400mV @ 5mA, 50mA
Current - Collector Cutoff (max)
10µA
Dc Current Gain (hfe) (min) @ Ic, Vce
40 @ 50mA, 3V
Power - Max
500mW
Frequency - Transition
450MHz
Mounting Type
Through Hole
Package / Case
16-DIP (0.300", 7.62mm)
Capacitance, Input
0.58 pF
Current, Collector
100 mA
Current, Input
0.002 nA
Current, Output Clamp
-2.5 A
Number Of Transistors
5
Package Type
PDIP
Polarization
NPN
Propagation Delay Time, (high-to-low Level Output)
0.25 us
Propagation Delay Time, (low-to-high Level Output)
0.25 us
Voltage, Breakdown, Collector To Emitter
24 V
Voltage, Forward
1.7 V
Voltage, Input
24 V
Voltage, Output
60 V
Voltage, Saturation, Collector To Emitter
0.7
Module Configuration
Five
Transistor Polarity
NPN
Collector Emitter Voltage V(br)ceo
15V
Power Dissipation Pd
500mW
Dc Collector Current
100mA
Dc Current Gain Hfe
76
Rohs Compliant
Yes
Transition Frequency Typ Ft
450MHz
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
CA3083Z
Manufacturer:
Intersil
Quantity:
10 000
General Purpose High Current NPN
Transistor Array
The CA3083 is a versatile array of five high current (to
100mA) NPN transistors on a common monolithic substrate.
In addition, two of these transistors (Q
matched at low current (i.e., 1mA) for applications in which
offset parameters are of special importance.
Independent connections for each transistor plus a separate
terminal for the substrate permit maximum flexibility in circuit
design
Ordering Information
NOTE: Intersil Pb-free plus anneal products employ special Pb-free
material sets; molding compounds/die attach materials and 100%
matte tin plate termination finish, which are RoHS compliant and
compatible with both SnPb and Pb-free soldering operations. Intersil
Pb-free products are MSL classified at Pb-free peak reflow
temperatures that meet or exceed the Pb-free requirements of
IPC/JEDEC J STD-020.
Pinout
CA3083
CA3083M96
CA3083MZ
(Note)
CA3083MZ96
(Note)
NUMBER
PART
SUBSTRATE
.
MARKING
CA3083
3083
3083MZ
3083MZ
PART
1
2
3
4
5
6
7
8
(PDIP, SOIC)
-55 to 125 16 Ld PDIP
-55 to 125 16 Ld SOIC Tape and
-55 to 125 16 Ld SOIC (Pb-Free) M16.15
-55 to 125 16 Ld SOIC (Pb-Free)
RANGE
TOP VIEW
TEMP.
Q
Q
CA3083
(°C)
®
2
3
Q
1
1
Q
4
Reel
Tape and Reel
Q
5
Data Sheet
1
PACKAGE
and Q
16
15
14
13
12
11
10
9
2
) are
1-888-INTERSIL or 1-888-468-3774
DWG. #
E16.3
M16.15
M16.15
PKG.
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
Features
• High I
• Low V
• Matched Pair (Q
• 5 Independent Transistors Plus Separate Substrate
• Pb-Free Plus Anneal Available (RoHS Compliant)
Applications
• Signal Processing and Switching Systems Operating from
• Lamp and Relay Driver
• Differential Amplifier
• Temperature Compensated Amplifier
• Thyristor Firing
• See Application Note AN5296 “Applications of the
November 29, 2005
- V
- I
Connection
DC to VHF
CA3018 Circuit Transistor Array” for Suggested
Applications
IO
IO
(at 1mA) . . . . . . . . . . . . . . . . . . . . . . . . 2.5µA (Max)
C
All other trademarks mentioned are the property of their respective owners.
CE sat
(V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mA (Max)
|
BE
Intersil (and design) is a registered trademark of Intersil Americas Inc.
Match) . . . . . . . . . . . . . . . . . . . . . ±5mV (Max)
(at 50mA). . . . . . . . . . . . . . . . . . . 0.7V (Max)
Copyright Intersil Americas Inc. 1998, 2005. All Rights Reserved
1
and Q
2
)
CA3083
FN481.5

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CA3083Z Summary of contents

Page 1

... Match ±5mV (Max Intersil (and design registered trademark of Intersil Americas Inc. Copyright Intersil Americas Inc. 1998, 2005. All Rights Reserved FN481.5 ...

Page 2

Absolute Maximum Ratings The following ratings apply for each transistor in the device: Collector-to-Emitter Voltage 15V CEO ...

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