MT46H16M16LFBF-6:H Micron Technology Inc, MT46H16M16LFBF-6:H Datasheet - Page 49

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MT46H16M16LFBF-6:H

Manufacturer Part Number
MT46H16M16LFBF-6:H
Description
DRAM Chip DDR SDRAM 256M-Bit 16Mx16 1.8V 60-Pin VFBGA Tray
Manufacturer
Micron Technology Inc
Type
DDR SDRAMr
Series
-r

Specifications of MT46H16M16LFBF-6:H

Package
60VFBGA
Density
256 Mb
Address Bus Width
15 Bit
Operating Supply Voltage
1.8 V
Maximum Clock Rate
166 MHz
Maximum Random Access Time
6.5|5 ns
Operating Temperature
0 to 70 °C
Format - Memory
RAM
Memory Type
Mobile DDR SDRAM
Memory Size
256M (16Mx16)
Speed
166MHz
Interface
Parallel
Voltage - Supply
1.7 V ~ 1.95 V
Package / Case
60-VFBGA
Lead Free Status / Rohs Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MT46H16M16LFBF-6:H
Manufacturer:
Micron Technology Inc
Quantity:
10 000
Company:
Part Number:
MT46H16M16LFBF-6:H
Quantity:
568
Part Number:
MT46H16M16LFBF-6:H TR
Manufacturer:
Micron Technology Inc
Quantity:
10 000
Standard Mode Register
Figure 17: Standard Mode Register Definition
Burst Length
PDF: 09005aef834bf85b
256mb_mobile_ddr_sdram_t36n.pdf - Rev. H 11/09 EN
Note:
The standard mode register bit definition enables the selection of burst length, burst
type, CAS latency (CL), and operating mode, as shown in Figure 17. Reserved states
should not be used as this may result in setting the device into an unknown state or
cause incompatibility with future versions of LPDDR devices. The standard mode regis-
ter is programmed via the LOAD MODE REGISTER command (with BA0 = 0 and BA1 =
0) and will retain the stored information until it is programmed again, until the device
goes into deep power-down mode, or until the device loses power.
Reprogramming the mode register will not alter the contents of the memory, provided
it is performed correctly. The mode register must be loaded when all banks are idle and
no bursts are in progress, and the controller must wait
quent operation. Violating any of these requirements will result in unspecified operation.
Read and write accesses to the device are burst-oriented, and the burst length (BL) is
programmable. The burst length determines the maximum number of column loca-
1. The integer n is equal to the most significant address bit.
Mn
0
...
M10
M
0
n + 2
0
0
1
1
M9
0
M
M8
n + 1
0
n + 2
0
1
0
1
BA1
0
M7
n + 1
0
Mode Register Definition
Standard mode register
Status register
Extended mode register
Reserved
0
BA0
M6
0
0
0
0
1
1
1
1
Operating Mode
Normal operation
All other states reserved
n
Operating Mode
An ...
M5
...
0
0
1
1
0
0
1
1
49
10
A10
M4
0
1
0
1
0
1
0
1
256Mb: x16, x32 Mobile LPDDR SDRAM
9
A9
CAS Latency
Reserved
Reserved
Reserved
Reserved
Reserved
Reserved
8
A8
Micron Technology, Inc. reserves the right to change products or specifications without notice.
2
3
7
A7 A6 A5 A4 A3
CAS Latency BT
6
5
4
M3
0
1
3
Burst Length
Standard Mode Register
t
MRD before initiating the subse-
M2
2
0
0
0
0
1
1
1
1
A2 A1 A0
Burst Type
Interleaved
Sequential
M1
1
0
0
1
1
0
0
1
1
0
M0
©2008 Micron Technology, Inc. All rights reserved.
0
1
0
1
0
1
0
1
Standard mode register (Mx)
Reserved
Reserved
Reserved
Reserved
M3 = 0
Address bus
16
2
4
8
Burst Length
Reserved
Reserved
Reserved
Reserved
M3 = 1
16
2
4
8

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