MT46H16M16LFBF-6:H Micron Technology Inc, MT46H16M16LFBF-6:H Datasheet - Page 88

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MT46H16M16LFBF-6:H

Manufacturer Part Number
MT46H16M16LFBF-6:H
Description
DRAM Chip DDR SDRAM 256M-Bit 16Mx16 1.8V 60-Pin VFBGA Tray
Manufacturer
Micron Technology Inc
Type
DDR SDRAMr
Series
-r

Specifications of MT46H16M16LFBF-6:H

Package
60VFBGA
Density
256 Mb
Address Bus Width
15 Bit
Operating Supply Voltage
1.8 V
Maximum Clock Rate
166 MHz
Maximum Random Access Time
6.5|5 ns
Operating Temperature
0 to 70 °C
Format - Memory
RAM
Memory Type
Mobile DDR SDRAM
Memory Size
256M (16Mx16)
Speed
166MHz
Interface
Parallel
Voltage - Supply
1.7 V ~ 1.95 V
Package / Case
60-VFBGA
Lead Free Status / Rohs Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MT46H16M16LFBF-6:H
Manufacturer:
Micron Technology Inc
Quantity:
10 000
Company:
Part Number:
MT46H16M16LFBF-6:H
Quantity:
568
Part Number:
MT46H16M16LFBF-6:H TR
Manufacturer:
Micron Technology Inc
Quantity:
10 000
SELF REFRESH Operation
PDF: 09005aef834bf85b
256mb_mobile_ddr_sdram_t36n.pdf - Rev. H 11/09 EN
The SELF REFRESH command can be used to retain data in the device while the rest of
the system is powered down. When in self refresh mode, the device retains data without
external clocking. The SELF REFRESH command is initiated like an AUTO REFRESH
command, except that CKE is disabled (LOW). All command and address input signals
except CKE are “Don’t Care” during self refresh.
During self refresh, the device is refreshed as defined in the extended mode register.
(see Partial-Array Self Refresh (page 54).) An internal temperature sensor adjusts the
refresh rate to optimize device power consumption while ensuring data integrity. (See
Temperature-Compensated Self Refresh (page 53).)
The procedure for exiting self refresh requires a sequence of commands. First, CK must
be stable prior to CKE going HIGH. When CKE is HIGH, the device must have NOP com-
mands issued for
During SELF REFRESH operation, refresh intervals are scheduled internally and may
vary. These refresh intervals may differ from the specified
the SELF REFRESH command must not be used as a substitute for the AUTO REFRESH
command.
t
XSR to complete any internal refresh already in progress.
88
256Mb: x16, x32 Mobile LPDDR SDRAM
Micron Technology, Inc. reserves the right to change products or specifications without notice.
SELF REFRESH Operation
t
REFI time. For this reason,
©2008 Micron Technology, Inc. All rights reserved.

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