MT46H16M16LFBF-6:H Micron Technology Inc, MT46H16M16LFBF-6:H Datasheet - Page 59

• Manufacturer Part Number: MT46H16M16LFBF-6:H
• Description: DRAM Chip DDR SDRAM 256M-Bit 16Mx16 1.8V 60-Pin VFBGA Tray
• Manufacturer: Micron Technology Inc
• Type: DDR SDRAMr
• Series: -r

Specifications of MT46H16M16LFBF-6:H

• Package: 60VFBGA
• Density: 256 Mb
• Address Bus Width: 15 Bit
• Operating Supply Voltage: 1.8 V
• Maximum Clock Rate: 166 MHz
• Maximum Random Access Time: 6.5|5 ns
• Operating Temperature: 0 to 70 °C
• Format - Memory: RAM
• Memory Type: Mobile DDR SDRAM
• Memory Size: 256M (16Mx16)
• Speed: 166MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.95 V
• Package / Case: 60-VFBGA
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

Figure 22: READ Burst
PDF: 09005aef834bf85b
256mb_mobile_ddr_sdram_t36n.pdf - Rev. H 11/09 EN
Command
Command
Address
Address
DQS
DQS
CK#
CK#
DQ
DQ
CK
CK
Bank a, Col n
Bank a, Col n
READ
READ
T0
T0
Notes:
command to the same bank cannot be issued until
time is hidden during the access of the last data elements.
1. D
2. BL = 4.
3. Shown with nominal
CL = 2
NOP
NOP
T1
T1
OUT
n = data-out from column n.
CL = 3
T1n
D
OUT
NOP
NOP
T2
T2
t
AC,
D
59
t
T2n
T2n
DQSCK, and
OUT
256Mb: x16, x32 Mobile LPDDR SDRAM
D
OUT
NOP
NOP
D
T3
T3
Micron Technology, Inc. reserves the right to change products or specifications without notice.
OUT
t
DQSQ.
D
T3n
T3n
OUT
D
OUT
t
RP is met. Part of the row precharge
NOP
NOP
D
Don’t Care
T4
T4
OUT
©2008 Micron Technology, Inc. All rights reserved.
D
OUT
READ Operation
Transitioning Data
NOP
NOP
T5
T5