PUMD3,135 NXP Semiconductors, PUMD3,135 Datasheet - Page 6

• Manufacturer Part Number: PUMD3,135
• Description: TRANS ARRAY NPN/PNP SOT-363
• Manufacturer: NXP Semiconductors

Specifications of PUMD3,135

• Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 10K
• Resistor - Emitter Base (r2) (ohms): 10K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 30 @ 5mA, 5V
• Vce Saturation (max) @ Ib, Ic: 150mV @ 500µA, 10mA
• Current - Collector Cutoff (max): 1µA
• Power - Max: 300mW
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Frequency - Transition: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934050170135

NXP Semiconductors
PEMD3_PIMD3_PUMD3_10
Product data sheet
Fig 5.
Fig 7.
V
h
−10
(V)
I(on)
−10
−10
−10
(1) T
(2) T
(3) T
(1) T
(2) T
(3) T
FE
−10
−10
−1
−1
−10
−1
−10
3
2
2
V
TR2 (PNP): DC current gain as a function of
collector current; typical values
V
TR2 (PNP): On-state input voltage as a
function of collector current; typical values
−1
−1
CE
amb
amb
amb
CE
amb
amb
amb
= −5 V
= −0.3 V
= 150 °C
= 25 °C
= −40 °C
= −40 °C
= 25 °C
= 100 °C
−1
−1
(1)
(3)
(2)
−10
−10
(1)
(3)
I
I
(2)
C
C
006aaa046
(mA)
006aaa048
(mA)
Rev. 10 — 15 November 2009
−10
−10
NPN/PNP resistor-equipped transistors; R1 = 10 kΩ, R2 = 10 kΩ
2
2
Fig 6.
Fig 8.
V
V
−10
−10
−10
CEsat
PEMD3; PIMD3; PUMD3
(V)
(V)
I(off)
(1) T
(2) T
(3) T
(1) T
(2) T
(3) T
−10
−1
−1
−10
−1
−2
−1
−1
I
TR2 (PNP): Collector-emitter voltage as a
function of collector current; typical values
V
TR2 (PNP): Off-state input voltage as a
function of collector current; typical values
C
−2
amb
amb
amb
amb
amb
amb
CE
/I
B
= −5 V
= 20
= 100 °C
= 25 °C
= −40 °C
= −40 °C
= 25 °C
= 100 °C
−10
−1
(1)
(2)
(3)
−10
(1)
(3)
−1
(2)
I
C
(mA)
I
© NXP B.V. 2009. All rights reserved.
C
006aaa047
006aaa049
(mA)
−10
−10
2
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