PUMD3,115 NXP Semiconductors, PUMD3,115 Datasheet - Page 3

• Manufacturer Part Number: PUMD3,115
• Description: TRANS NPN/PNP 50V 100MA SOT363
• Manufacturer: NXP Semiconductors

Specifications of PUMD3,115

• Package / Case: SC-70-6, SC-88, SOT-363
• Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 10K
• Resistor - Emitter Base (r2) (ohms): 10K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 30 @ 5mA, 5V
• Vce Saturation (max) @ Ib, Ic: 150mV @ 500µA, 10mA
• Current - Collector Cutoff (max): 1µA
• Power - Max: 300mW
• Mounting Type: Surface Mount
• Configuration: Dual
• Transistor Polarity: NPN/PNP
• Typical Input Resistor: 10 KOhms
• Typical Resistor Ratio: 1
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 50 V
• Peak Dc Collector Current: 100 mA
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Collector-emitter Voltage: 50V
• Dc Current Gain (min): 30
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 6
• Package Type: SOT-363
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Frequency - Transition: -
• Lead Free Status / Rohs Status: Compliant
• Other names: 568-5039-2; 934050170115; PUMD3 T/R; PUMD3 T/R; PUMD3,115

NXP Semiconductors
5. Limiting values
PEMD3_PIMD3_PUMD3_10
Product data sheet
Table 6.
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
[2]
[3]
Symbol
Per transistor; for the PNP transistor with negative polarity
V
V
V
V
I
I
P
T
T
T
Per device
P
O
CM
stg
j
amb
CBO
CEO
EBO
I
tot
tot
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
Device mounted on an FR4 PCB with 65 μm copper strip line, standard footprint.
Reflow soldering is the only recommended soldering method.
Limiting values
Parameter
collector-base voltage
collector-emitter voltage
emitter-base voltage
input voltage TR1
input voltage TR2
output current (DC)
peak collector current
total power dissipation
storage temperature
junction temperature
ambient temperature
total power dissipation
positive
negative
positive
negative
SOT363
SOT457
SOT666
SOT363
SOT457
SOT666
Rev. 10 — 15 November 2009
NPN/PNP resistor-equipped transistors; R1 = 10 kΩ, R2 = 10 kΩ
Conditions
open emitter
open base
open collector
T
T
PEMD3; PIMD3; PUMD3
amb
amb
≤ 25 °C
≤ 25 °C
[1][3]
[1][3]
[1]
[2]
[1]
[2]
Min
-
-
-
-
-
-
-
-
-
-
-
-
−65
-
−65
-
-
-
© NXP B.V. 2009. All rights reserved.
50
50
10
100
150
Max
+40
−10
+10
−40
100
200
300
200
+150
+150
300
600
300
Unit
V
V
V
V
V
V
V
mA
mA
mW
mW
mW
°C
°C
°C
mW
mW
mW
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