PBLS2021D,115 NXP Semiconductors, PBLS2021D,115 Datasheet - Page 11

• Manufacturer Part Number: PBLS2021D,115
• Description: LOADSWITCH PNP 20V 1.8A SC-74
• Manufacturer: NXP Semiconductors

Specifications of PBLS2021D,115

• Package / Case: SC-74-6
• Transistor Type: 1 NPN Pre-Biased, 1 PNP
• Current - Collector (ic) (max): 100mA, 1.8A
• Voltage - Collector Emitter Breakdown (max): 50V, 20V
• Resistor - Base (r1) (ohms): 2.2K
• Resistor - Emitter Base (r2) (ohms): 2.2K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 30 @ 20mA, 5V / 200 @ 1A, 2V
• Vce Saturation (max) @ Ib, Ic: 150mV @ 500µA, 10mA / 210mV @ 100mA, 1.8A
• Current - Collector Cutoff (max): 1µA, 100nA
• Frequency - Transition: 130MHz
• Power - Max: 760mW
• Mounting Type: Surface Mount
• Configuration: Dual
• Transistor Polarity: PNP
• Typical Input Resistor: 2.2 KOhms
• Typical Resistor Ratio: 1
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: - 20 V
• Continuous Collector Current: - 1.8 A
• Peak Dc Collector Current: - 3 A
• Power Dissipation: 370 mW
• Maximum Operating Temperature: + 150 C
• Emitter- Base Voltage Vebo: - 5 V
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934061573115

NXP Semiconductors
PBLS2021D_2
Product data sheet
Fig 16. TR2 (NPN): Collector-emitter saturation
V
(mV)
CEsat
(1) T
(2) T
(3) T
10
10
10
3
2
1
I
voltage as a function of collector current;
typical values
C
amb
amb
amb
/I
B
= 20
= 100 C
= 25 C
= 40 C
(1)
(2)
(3)
10
I
C
(mA)
006aaa014
Rev. 02 — 6 September 2009
10
2
Fig 17. TR2 (NPN): Collector-emitter saturation
V
CEsat
(V)
10
1
1
10
I
voltage as a function of collector current;
typical values
C
/I
B
= 50; T
amb
20 V, 1.8 A PNP BISS loadswitch
= 25 C
PBLS2021D
I
C
(mA)
© NXP B.V. 2009. All rights reserved.
006aab519
10
2
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