PBLS2024D,115 NXP Semiconductors, PBLS2024D,115 Datasheet - Page 3

• Manufacturer Part Number: PBLS2024D,115
• Description: LOADSWITCH PNP 1.8A 20V SOT457
• Manufacturer: NXP Semiconductors

Specifications of PBLS2024D,115

• Package / Case: SC-74-6
• Transistor Type: 1 NPN Pre-Biased, 1 PNP
• Current - Collector (ic) (max): 100mA, 1.8A
• Voltage - Collector Emitter Breakdown (max): 50V, 20V
• Resistor - Base (r1) (ohms): 22K
• Resistor - Emitter Base (r2) (ohms): 22K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 60 @ 5mA, 5V / 200 @ 1A, 2V
• Vce Saturation (max) @ Ib, Ic: 150mV @ 500µA, 10mA / 210mV @ 100mA, 1.8A
• Current - Collector Cutoff (max): 1µA, 100nA
• Frequency - Transition: 130MHz
• Power - Max: 760mW
• Mounting Type: Surface Mount
• Configuration: Dual
• Transistor Polarity: PNP
• Typical Input Resistor: 22 KOhms
• Typical Resistor Ratio: 1
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: - 20 V
• Continuous Collector Current: - 1.8 A
• Peak Dc Collector Current: - 3 A
• Power Dissipation: 370 mW
• Maximum Operating Temperature: + 150 C
• Emitter- Base Voltage Vebo: - 5 V
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934061576115

NXP Semiconductors
5. Limiting values
PBLS2024D_2
Product data sheet
Table 5.
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
[2]
[3]
Symbol
TR1; PNP low V
V
V
V
I
I
I
I
P
TR2; NPN resistor-equipped transistor
V
V
V
V
I
I
P
Per device
P
T
T
T
C
CM
B
BM
O
CM
j
amb
stg
CBO
CEO
EBO
tot
CBO
CEO
EBO
I
tot
tot
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm
Device mounted on a ceramic PCB, Al
Limiting values
Parameter
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current
peak collector current
base current
peak base current
total power dissipation
collector-base voltage
collector-emitter voltage
emitter-base voltage
input voltage
output current
peak collector current
total power dissipation
total power dissipation
junction temperature
ambient temperature
storage temperature
positive
negative
CEsat
transistor
Rev. 02 — 6 September 2009
2
O
Conditions
open emitter
open base
open collector
single pulse;
t
single pulse;
t
T
open emitter
open base
open collector
single pulse;
t
T
T
3
p
p
p
, standard footprint.
amb
amb
amb
1 ms
1 ms
1 ms
25 C
25 C
25 C
20 V, 1.8 A PNP BISS loadswitch
[1][2]
[1]
[2]
[3]
[3]
[1]
[2]
[3]
Min
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
55
65
PBLS2024D
© NXP B.V. 2009. All rights reserved.
Max
370
480
630
50
50
10
+40
100
100
200
480
590
760
150
+150
+150
20
20
5
1.8
3
300
1
10
Unit
V
V
V
A
A
mA
A
mW
mW
mW
V
V
V
V
V
mA
mA
mW
mW
mW
mW
C
C
C
2
.
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