BC847BPNT/R NXP Semiconductors, BC847BPNT/R Datasheet - Page 6

• Manufacturer Part Number: BC847BPNT/R
• Description: Trans GP BJT NPN/PNP 45V 0.1A 6-Pin SOT-363 T/R
• Manufacturer: NXP Semiconductors
• Type: NPN|PNPr

Specifications of BC847BPNT/R

• Package: 6SOT-363
• Supplier Package: SOT-363
• Pin Count: 6
• Minimum Dc Current Gain: 200@2mA@5V
• Maximum Operating Frequency: 100(Min) MHz
• Maximum Dc Collector Current: 0.1 A
• Maximum Base Emitter Saturation Voltage: 0.755(Typ)@0.5mA@10mA V
• Maximum Collector Emitter Saturation Voltage: 0.1@0.5mA@10mA|0.3@5mA@100mA V
• Maximum Collector Base Voltage: 50 V
• Maximum Collector Emitter Voltage: 45 V
• Maximum Emitter Base Voltage: 5 V

NXP Semiconductors
BC847BPN_4
Product data sheet
Fig 4.
Fig 6.
(mV)
V
BE
h
(1) T
(2) T
(3) T
(1) T
(2) T
(3) T
1200
1000
FE
600
500
400
300
200
100
800
600
400
200
0
10
0
10
V
TR1 (NPN): DC current gain as a function of
collector current; typical values
V
TR1 (NPN): Base-emitter voltage as a function
of collector current; typical values
CE
amb
amb
amb
CE
amb
amb
amb
1
2
= 5 V
= 5 V
= 150 C
= 25 C
= 55 C
= 55 C
= 25 C
= 150 C
10
1
1
1
(1)
(2)
(3)
10
(1)
(2)
(3)
10
10
2
10
I
C
I
2
C
(mA)
mgt727
mgt728
(mA)
Rev. 04 — 18 February 2009
10
10
3
3
Fig 5.
Fig 7.
45 V, 100 mA NPN/PNP general-purpose transistor
V
BEsat
(A)
(V)
I
(1) T
(2) T
(3) T
0.20
C
0.15
0.10
0.05
1.2
1.0
0.8
0.6
0.4
0.2
0
10
0
T
TR1 (NPN): Collector current as a function of
collector-emitter voltage; typical values
I
TR1 (NPN): Base-emitter saturation voltage as
a function of collector current; typical values
C
amb
amb
amb
amb
1
/I
B
= 20
= 25 C
= 55 C
= 25 C
= 150 C
1
1
2
(1)
(2)
(3)
10
I
B
(mA) = 4.0
3
BC847BPN
3.2
2.4
1.6
0.8
10
© NXP B.V. 2009. All rights reserved.
2
4
I
006aab422
006aab423
C
V
3.6
2.8
2.0
1.2
0.4
CE
(mA)
(V)
10
5
3
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