BC847BPNT/R NXP Semiconductors, BC847BPNT/R Datasheet - Page 8

• Manufacturer Part Number: BC847BPNT/R
• Description: Trans GP BJT NPN/PNP 45V 0.1A 6-Pin SOT-363 T/R
• Manufacturer: NXP Semiconductors
• Type: NPN|PNPr

Specifications of BC847BPNT/R

• Package: 6SOT-363
• Supplier Package: SOT-363
• Pin Count: 6
• Minimum Dc Current Gain: 200@2mA@5V
• Maximum Operating Frequency: 100(Min) MHz
• Maximum Dc Collector Current: 0.1 A
• Maximum Base Emitter Saturation Voltage: 0.755(Typ)@0.5mA@10mA V
• Maximum Collector Emitter Saturation Voltage: 0.1@0.5mA@10mA|0.3@5mA@100mA V
• Maximum Collector Base Voltage: 50 V
• Maximum Collector Emitter Voltage: 45 V
• Maximum Emitter Base Voltage: 5 V

NXP Semiconductors
BC847BPN_4
Product data sheet
Fig 10. TR2 (PNP): DC current gain as a function of
Fig 12. TR2 (PNP): Base-emitter voltage as a function
h
1200
1000
V
(1) T
(2) T
(3) T
(1) T
(2) T
(3) T
mV
FE
600
400
200
800
600
400
200
BE
0
10
10
V
collector current; typical values
V
of collector current; typical values
CE
amb
amb
amb
CE
amb
amb
amb
1
2
= 5 V
= 5 V
= 150 C
= 25 C
= 55 C
= 55 C
= 25 C
= 150 C
10
1
1
(1)
(2)
(3)
1
(1)
(2)
(3)
10
10
10
2
10
I
006aab425
C
2
I
C
(mA)
mld700
(mA)
Rev. 04 — 18 February 2009
10
10
3
3
Fig 11. TR2 (PNP): Collector current as a function of
Fig 13. TR2 (PNP): Base-emitter saturation voltage as
45 V, 100 mA NPN/PNP general-purpose transistor
V
(mV)
(A)
BEsat
1200
1000
I
(1) T
(2) T
(3) T
0.20
C
0.15
0.10
0.05
800
600
400
200
0
10
0
T
collector-emitter voltage; typical values
I
a function of collector current; typical values
C
amb
amb
amb
amb
/I
1
B
= 20
= 25 C
= 55 C
= 25 C
= 150 C
1
1
2
I
B
10
(mA) = 3.5
(1)
(2)
(3)
3
BC847BPN
2.8
2.1
1.4
0.7
10
© NXP B.V. 2009. All rights reserved.
2
4
I
006aab426
C
V
3.15
2.45
1.75
1.05
0.35
CE
(mA)
mld702
(V)
10
5
3
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