PBSS4320T,215 NXP Semiconductors, PBSS4320T,215 Datasheet - Page 4

• Manufacturer Part Number: PBSS4320T,215
• Description: TRANS NPN 20V 2A SOT23
• Manufacturer: NXP Semiconductors

Specifications of PBSS4320T,215

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Transistor Type: NPN
• Current - Collector (ic) (max): 2A
• Voltage - Collector Emitter Breakdown (max): 20V
• Vce Saturation (max) @ Ib, Ic: 310mV @ 300mA, 3A
• Dc Current Gain (hfe) (min) @ Ic, Vce: 220 @ 1A, 2V
• Power - Max: 540mW
• Frequency - Transition: 100MHz
• Mounting Type: Surface Mount
• Dc Collector/base Gain Hfe Min: 220
• Minimum Operating Temperature: - 65 C
• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 20 V
• Emitter- Base Voltage Vebo: 5 V
• Continuous Collector Current: 2 A
• Maximum Dc Collector Current: 5 A
• Power Dissipation: 300 mW
• Maximum Operating Frequency: 100 MHz
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-4157-2; 934056854215; PBSS4320T T/R; PBSS4320T T/R

NXP Semiconductors
CHARACTERISTICS
T
Note
1. Pulse test: t
2004 Mar 18
I
I
h
V
R
V
V
f
C
SYMBOL
amb
CBO
EBO
T
FE
CEsat
BEsat
BEon
20 V NPN low V
CEsat
c
= 25 °C unless otherwise specified.
collector-base cut-off current I
emitter-base cut-off current
DC current gain
collector-emitter saturation
voltage
equivalent on-resistance
base-emitter saturation
voltage
base-emitter turn-on voltage
transition frequency
collector capacitance
p
≤ 300 μs; δ ≤ 0.02.
PARAMETER
CEsat
transistor
I
I
I
I
I
I
I
I
I
I
I
I
I
I
I
I
I
f = 100 MHz
I
E
E
C
C
C
C
C
C
C
C
C
C
C
C
C
C
C
C
E
= 0 A; V
= 0 A; V
= I
= 0 A; V
= 100 mA; V
= 500 mA; V
= 1 A; V
= 2 A; V
= 3 A; V
= 500 mA; I
= 1 A; I
= 2 A; I
= 2 A; I
= 3 A; I
= 2 A; I
= 2 A; I
= 3 A; I
= 1 A; V
= 100 mA; V
e
= 0 A; V
B
B
B
B
B
B
B
CB
CB
EB
CE
CE
CE
CE
CONDITIONS
= 50 mA
= 300 mA; note 1
= 200 mA; note 1
= 40 mA; note 1
= 200 mA; note 1
= 40 mA; note 1
= 300 mA; note 1
= 20 V
= 20 V; T
= 5 V
= 2 V; note 1
= 2 V; note 1
= 2 V; note 1
= 2 V; note 1
B
CB
CE
CE
CE
4
= 50 mA
= 10 V; f = 1 MHz −
= 2 V
= 2 V
= 5 V;
j
= 150 °C
−
−
−
220
220
220
200
150
−
−
−
−
−
−
−
−
1.2
100
MIN.
−
−
−
−
−
−
−
−
−
−
−
−
−
80
−
−
−
−
−
TYP.
PBSS4320T
Product data sheet
100
50
100
−
−
−
−
−
70
120
230
210
310
105
1.1
1.2
−
−
35
MAX.
nA
μA
nA
mV
mV
mV
mV
mV
mΩ
V
V
V
MHz
pF
UNIT