PBSS5540Z,115 NXP Semiconductors, PBSS5540Z,115 Datasheet - Page 6

• Manufacturer Part Number: PBSS5540Z,115
• Description: TRANS PNP 40V 5A SOT223
• Manufacturer: NXP Semiconductors

Specifications of PBSS5540Z,115

• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Transistor Type: PNP
• Current - Collector (ic) (max): 5A
• Voltage - Collector Emitter Breakdown (max): 40V
• Vce Saturation (max) @ Ib, Ic: 160mV @ 200mA, 2A
• Dc Current Gain (hfe) (min) @ Ic, Vce: 150 @ 2A, 2V
• Power - Max: 2W
• Frequency - Transition: 120MHz
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 65 C
• Configuration: Single Dual Collector
• Transistor Polarity: PNP
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 40 V
• Emitter- Base Voltage Vebo: 6 V
• Maximum Dc Collector Current: 5 A
• Power Dissipation: 2000 mW
• Maximum Operating Frequency: 120 MHz
• Maximum Operating Temperature: + 150 C
• Number Of Elements: 1
• Collector-emitter Voltage: 40V
• Collector-base Voltage: 40V
• Emitter-base Voltage: 6V
• Collector Current (dc) (max): 5A
• Dc Current Gain (min): 250
• Frequency (max): 120MHz
• Operating Temp Range: -65C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3 +Tab
• Package Type: SOT-223
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-4172-2; 934055496115; PBSS5540Z T/R; PBSS5540Z T/R

NXP Semiconductors
2001 Sep 21
handbook, halfpage
40 V low V
T
(1) I
(2) I
(3) I
(4) I
Fig.6
amb
(A)
I C
−10
−8
−6
−4
−2
= 25 °C.
B
B
B
B
0
= −150 mA.
= −135 mA.
= −120 mA.
= −105 mA.
0
Collector current as a function of
collector-emitter voltage; typical values.
−0.4
CEsat
(5) I
(6) I
(7) I
(8) I
−0.8
B
B
B
B
PNP transistor
= −90 mA.
= −75 mA.
= −60 mA.
= −45 mA.
−1.2
(1)
(2)
−1.6
(9) I
(10) I
(10)
V CE (V)
(3)
(4)
(5)
(6)
(7)
(8)
(9)
MGU392
B
B
= −30 mA.
= −15 mA.
−2
6
handbook, halfpage
I
(1) T
(2) T
(3) T
Fig.7
R CEsat
C
/I
(Ω)
B
10
10
10
= 20.
−10
10
−1
amb
amb
amb
1
3
2
−1
= 150 °C.
= 25 °C.
= −55 °C.
Collector-emitter equivalent on-resistance
as a function of collector current; typical
values.
−1
−10
−10
(1)
(3)
2
PBSS5540Z
(2)
Product data sheet
−10
3
I C (mA)
MGU396
−10
4