MJD44H11T4 STMicroelectronics, MJD44H11T4 Datasheet - Page 2

• Manufacturer Part Number: MJD44H11T4
• Description: TRANSISTOR NPN 80V 8A DPAK
• Manufacturer: STMicroelectronics
• Type: Amplifier, Switchr

Specifications of MJD44H11T4

• Transistor Type: NPN
• Current - Collector (ic) (max): 8A
• Voltage - Collector Emitter Breakdown (max): 80V
• Vce Saturation (max) @ Ib, Ic: 1V @ 400mA, 8A
• Current - Collector Cutoff (max): 10µA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 40 @ 4A, 1V
• Power - Max: 20W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Current, Collector: -8 A
• Current, Gain: 60
• Package Type: TO-252
• Polarity: PNP
• Power Dissipation: 20 W
• Primary Type: Si
• Resistance, Thermal, Junction To Case: 6.25 °C/W
• Voltage, Breakdown, Collector To Emitter: -80 V
• Voltage, Collector To Emitter: -80 V
• Voltage, Collector To Emitter, Saturation: -1 V
• Voltage, Emitter To Base: -5 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Frequency - Transition: -
• Lead Free Status / Rohs Status: RoHS Compliant part Electrostatic Device
• Other names: 497-2504-2

1
Note:
2/8
Absolute maximum ratings
Table 2.
For PNP types voltage and current values are negative.
Table 3.
Symbol
Symbol
R
V
V
P
T
I
thJC
CEO
EBO
STG
T
I
CM
TOT
C
J
Thermal resistance junction-case max
Absolute maximum ratings
Thermal data
Collector-emitter voltage (I
Emitter-base voltage (I
Collector current
Collector peak current
Total dissipation at T
Storage temperature
Max. operating junction temperature
Doc ID 16095 Rev 1
case
Parameter
C
Parameter
= 0)
= 25 °C
B
= 0)
-55 to 150
Value
Value
6.25
150
80
16
20
5
8
Unit
°C/W
Unit
°C
°C
W
V
V
A
A