TRANSISTOR PNP 80V 3A SOT-32

MJE172

Manufacturer Part NumberMJE172
DescriptionTRANSISTOR PNP 80V 3A SOT-32
ManufacturerSTMicroelectronics
TypeAmplifier, Power
MJE172 datasheets
 

Specifications of MJE172

Transistor TypePNPCurrent - Collector (ic) (max)3A
Voltage - Collector Emitter Breakdown (max)80VVce Saturation (max) @ Ib, Ic1.7V @ 600mA, 3A
Dc Current Gain (hfe) (min) @ Ic, Vce50 @ 100mA, 1VPower - Max12.5W
Frequency - Transition50MHzMounting TypeThrough Hole
Package / CaseTO-126-3Transistor PolarityPNP
Mounting StyleSMD/SMTCollector- Emitter Voltage Vceo Max80 V
Emitter- Base Voltage Vebo7 VMaximum Dc Collector Current3 A
Power Dissipation12.5 WContinuous Collector Current3 A
Dc Collector/base Gain Hfe Min50Maximum Operating Frequency50 MHz
Current, Collector-3 ACurrent, Gain250
Frequency50 MHzPackage TypeSOT-32
PolarityPNPPrimary TypeSi
Resistance, Thermal, Junction To Case10 °C/WVoltage, Breakdown, Collector To Emitter-80 V
Voltage, Collector To Base-100 VVoltage, Collector To Emitter-80 V
Voltage, Collector To Emitter, Saturation-1.7 VVoltage, Emitter To Base-7 V
Dc0027Lead Free Status / RoHS StatusLead free / RoHS Compliant
Current - Collector Cutoff (max)-Other names497-2553-5
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COMPLEMENTARY SILICON POWER TRANSISTORS
STMicroelectronics PREFERRED
SALESTYPES
COMPLEMENTARY PNP - NPN DEVICES
DESCRIPTION
The MJE172 (PNP type) and MJE182 (NPN type)
are silicon Epitaxial Planar, complementary
transistors in Jedec SOT-32 plastic package.
They are designed for low power audio amplifier
and
low
current,
high
applications.
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
V
Collector-Emitter Voltage (I
CEO
V
Collector-Base Voltage (I
CBO
V
Base-Emitter Voltage (I
EBO
I
Collector Current
C
I
Collector Peak Current (t
CM
I
Base Current
B
P
Total Power Dissipation at T
tot
T
Storage Temperature
stg
T
Total Power Dissipation at T
j
For PNP type voltage and current values are negative.
September 2003
speed
switching
INTERNAL SCHEMATIC DIAGRAM
NPN
PNP
= 0)
B
= 0)
E
= 0)
C
< 5 ms)
p
o
25
C
case
o
25
C
case
MJE172
MJE182
1
2
3
SOT-32
Value
Unit
MJE182
MJE172
80
V
100
V
7
V
3
A
6
A
1
A
12.5
W
o
-65 to 150
C
o
150
C
1/4

MJE172 Summary of contents

  • Page 1

    ... COMPLEMENTARY SILICON POWER TRANSISTORS STMicroelectronics PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES DESCRIPTION The MJE172 (PNP type) and MJE182 (NPN type) are silicon Epitaxial Planar, complementary transistors in Jedec SOT-32 plastic package. They are designed for low power audio amplifier and low ...

  • Page 2

    ... MJE172 - MJE182 THERMAL DATA R Thermal Resistance Junction-ambient thj-amb R Thermal Resistance Junction-case thj-case ELECTRICAL CHARACTERISTICS (T Symbol Parameter I Collector Cut-off CBO Current ( Emitter Cut-off Current EBO ( Collector-Emitter CEO(sus) Sustaining Voltage ( Collector-Emitter CE(sat) Saturation Voltage V Base-Emitter on BE(sat) Voltage V Base-Emitter on BE Voltage h DC Current Gain ...

  • Page 3

    ... MJE172 - MJE182 MAX. 0.307 0.425 0.035 0.025 0.106 0.051 0.630 0.126 0.100 1: Base 2: Collector 3: Emitter 0016114/B 3/4 ...

  • Page 4

    ... MJE172 - MJE182 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice ...