TRANSISTOR NPN 800V 4A TO-220

BUL216

Manufacturer Part NumberBUL216
DescriptionTRANSISTOR NPN 800V 4A TO-220
ManufacturerSTMicroelectronics
BUL216 datasheet
 


Specifications of BUL216

Transistor TypeNPNCurrent - Collector (ic) (max)4A
Voltage - Collector Emitter Breakdown (max)800VVce Saturation (max) @ Ib, Ic3V @ 660mA, 2A
Current - Collector Cutoff (max)250µADc Current Gain (hfe) (min) @ Ic, Vce12 @ 400mA, 5V
Power - Max90WMounting TypeThrough Hole
Package / CaseTO-220-3 (Straight Leads)Transistor PolarityNPN
Mounting StyleThrough HoleCollector- Emitter Voltage Vceo Max800 V
Emitter- Base Voltage Vebo9 VMaximum Dc Collector Current4 A
Power Dissipation90 WMaximum Operating Temperature+ 150 C
Continuous Collector Current4 ADc Collector/base Gain Hfe Min12
Number Of Elements1Collector-emitter Voltage800V
Collector-base Voltage1.6kVEmitter-base Voltage9V
Collector Current (dc) (max)4ADc Current Gain (min)12
Operating Temp Range-65C to 150COperating Temperature ClassificationMilitary
MountingThrough HolePin Count3 +Tab
Package TypeTO-220Lead Free Status / RoHS StatusLead free / RoHS Compliant
Frequency - Transition-Other names497-2638-5
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STMicroelectronics PREFERRED
SALESTYPE
NPN TRANSISTOR
HIGH VOLTAGE CAPABILITY
VERY HIGH SWITCHING SPEED
HIGH OPERATING JUNCTION
TEMPERATURE
HIGH RUGGEDNESS
APPLICATIONS
ELECTRONIC BALLASTS FOR
FLUORESCENT LIGHTING
SWITCH MODE POWER SUPPLIES
DESCRIPTION
The BUL216 is manufactured using high voltage
Multiepitaxial Mesa technology for cost-effective
high performance. It uses a Hollow Emitter
structure to enhance switching speeds.
The BUL series is designed for use in lighting
applications and low cost switch-mode power
supplies.
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
V
Collector-Emitter Voltage (V
CES
V
Collector-Emitter Voltage (I
CEO
V
Emitter-Base Voltage (I
EBO
I
Collector Current
C
I
Collector Peak Current (t
CM
I
Base Current
B
I
Base Peak Current (t
BM
P
Total Dissipation at T
tot
T
Storage Temperature
stg
T
Max. Operating Junction Temperature
j
June 2001
HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR
INTERNAL SCHEMATIC DIAGRAM
= 0)
BE
= 0)
B
= 0)
C
< 5 ms)
p
< 5 ms)
p
o
= 25
C
c
BUL216
3
2
1
TO-220
Value
Unit
1600
V
800
V
9
V
4
A
6
A
2
A
4
A
90
W
o
-65 to 150
C
o
150
C
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BUL216 Summary of contents

  • Page 1

    ... APPLICATIONS ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING SWITCH MODE POWER SUPPLIES DESCRIPTION The BUL216 is manufactured using high voltage Multiepitaxial Mesa technology for cost-effective high performance. It uses a Hollow Emitter structure to enhance switching speeds. The BUL series is designed for use in lighting applications and low cost switch-mode power supplies ...

  • Page 2

    ... BUL216 THERMAL DATA R Thermal Resistance Junction-Case thj-case R Thermal Resistance Junction-Ambient thj-amb ELECTRICAL CHARACTERISTICS (T Symbol Parameter I Collector Cut-off CES Current ( Collector Cut-off CEO Current ( Collector-Emitter CEO(sus) Sustaining Voltage V Emitter-Base Voltage EBO ( Collector-Emitter CE(sat) Saturation Voltage V Base-Emitter BE(sat) Saturation Voltage h DC Current Gain ...

  • Page 3

    ... DC Current Gain Collector Emitter Saturation Voltage Inductive Fall Time DC Current Gain Base Emitter Saturation Voltage Inductive Storage Time BUL216 3/6 ...

  • Page 4

    ... BUL216 Inductive Fall Time Reverse Biased SOA 4/6 Inductive Storage Time RBSOA and Inductive Load Switching Test Circuits (1) Fast electronic switch (2) Non-inductive Resistor (3) Fast recovery rectifier ...

  • Page 5

    ... BUL216 inch TYP. MAX. 0.181 0.052 0.107 0.027 0.034 0.067 0.067 0.202 0.106 0.409 0.645 0.551 0.116 0.620 0.260 0.154 0.102 ...

  • Page 6

    ... BUL216 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice ...