BUL216 STMicroelectronics, BUL216 Datasheet

TRANSISTOR NPN 800V 4A TO-220

BUL216

Manufacturer Part Number
BUL216
Description
TRANSISTOR NPN 800V 4A TO-220
Manufacturer
STMicroelectronics
Datasheet

Specifications of BUL216

Transistor Type
NPN
Current - Collector (ic) (max)
4A
Voltage - Collector Emitter Breakdown (max)
800V
Vce Saturation (max) @ Ib, Ic
3V @ 660mA, 2A
Current - Collector Cutoff (max)
250µA
Dc Current Gain (hfe) (min) @ Ic, Vce
12 @ 400mA, 5V
Power - Max
90W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Transistor Polarity
NPN
Mounting Style
Through Hole
Collector- Emitter Voltage Vceo Max
800 V
Emitter- Base Voltage Vebo
9 V
Maximum Dc Collector Current
4 A
Power Dissipation
90 W
Maximum Operating Temperature
+ 150 C
Continuous Collector Current
4 A
Dc Collector/base Gain Hfe Min
12
Number Of Elements
1
Collector-emitter Voltage
800V
Collector-base Voltage
1.6kV
Emitter-base Voltage
9V
Collector Current (dc) (max)
4A
Dc Current Gain (min)
12
Operating Temp Range
-65C to 150C
Operating Temperature Classification
Military
Mounting
Through Hole
Pin Count
3 +Tab
Package Type
TO-220
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Frequency - Transition
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
497-2638-5

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
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BUL216
Manufacturer:
STM
Quantity:
5 000
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Quantity:
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Manufacturer:
ST
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Part Number:
BUL216@@@@@@
Manufacturer:
ST
0
Part Number:
BUL216FP
Manufacturer:
ST
0
APPLICATIONS
DESCRIPTION
The BUL216 is manufactured using high voltage
Multiepitaxial Mesa technology for cost-effective
high performance. It uses a Hollow Emitter
structure to enhance switching speeds.
The BUL series is designed for use in lighting
applications and low cost switch-mode power
supplies.
ABSOLUTE MAXIMUM RATINGS
June 2001
Symbol
STMicroelectronics PREFERRED
SALESTYPE
NPN TRANSISTOR
HIGH VOLTAGE CAPABILITY
VERY HIGH SWITCHING SPEED
HIGH OPERATING JUNCTION
TEMPERATURE
HIGH RUGGEDNESS
ELECTRONIC BALLASTS FOR
FLUORESCENT LIGHTING
SWITCH MODE POWER SUPPLIES
V
V
V
T
P
I
I
CEO
CES
EBO
I
CM
T
I
BM
stg
C
B
tot
j
Collector-Emitter Voltage (V
Collector-Emitter Voltage (I
Emitter-Base Voltage (I
Collector Current
Collector Peak Current (t
Base Current
Base Peak Current (t
Total Dissipation at T
Storage Temperature
Max. Operating Junction Temperature
®
Parameter
p
c
< 5 ms)
= 25
C
p
= 0)
< 5 ms)
B
BE
o
C
= 0)
HIGH VOLTAGE FAST-SWITCHING
= 0)
NPN POWER TRANSISTOR
INTERNAL SCHEMATIC DIAGRAM
-65 to 150
Value
1600
800
150
90
TO-220
9
4
6
2
4
1
BUL216
2
3
Unit
o
o
W
V
V
V
A
A
A
A
C
C
1/6

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BUL216 Summary of contents

Page 1

... APPLICATIONS ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING SWITCH MODE POWER SUPPLIES DESCRIPTION The BUL216 is manufactured using high voltage Multiepitaxial Mesa technology for cost-effective high performance. It uses a Hollow Emitter structure to enhance switching speeds. The BUL series is designed for use in lighting applications and low cost switch-mode power supplies ...

Page 2

... BUL216 THERMAL DATA R Thermal Resistance Junction-Case thj-case R Thermal Resistance Junction-Ambient thj-amb ELECTRICAL CHARACTERISTICS (T Symbol Parameter I Collector Cut-off CES Current ( Collector Cut-off CEO Current ( Collector-Emitter CEO(sus) Sustaining Voltage V Emitter-Base Voltage EBO ( Collector-Emitter CE(sat) Saturation Voltage V Base-Emitter BE(sat) Saturation Voltage h DC Current Gain ...

Page 3

... DC Current Gain Collector Emitter Saturation Voltage Inductive Fall Time DC Current Gain Base Emitter Saturation Voltage Inductive Storage Time BUL216 3/6 ...

Page 4

... BUL216 Inductive Fall Time Reverse Biased SOA 4/6 Inductive Storage Time RBSOA and Inductive Load Switching Test Circuits (1) Fast electronic switch (2) Non-inductive Resistor (3) Fast recovery rectifier ...

Page 5

... BUL216 inch TYP. MAX. 0.181 0.052 0.107 0.027 0.034 0.067 0.067 0.202 0.106 0.409 0.645 0.551 0.116 0.620 0.260 0.154 0.102 ...

Page 6

... BUL216 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice ...

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