BUL216 STMicroelectronics, BUL216 Datasheet - Page 4

• Manufacturer Part Number: BUL216
• Description: TRANSISTOR NPN 800V 4A TO-220
• Manufacturer: STMicroelectronics

Specifications of BUL216

• Transistor Type: NPN
• Current - Collector (ic) (max): 4A
• Voltage - Collector Emitter Breakdown (max): 800V
• Vce Saturation (max) @ Ib, Ic: 3V @ 660mA, 2A
• Current - Collector Cutoff (max): 250µA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 12 @ 400mA, 5V
• Power - Max: 90W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Transistor Polarity: NPN
• Mounting Style: Through Hole
• Collector- Emitter Voltage Vceo Max: 800 V
• Emitter- Base Voltage Vebo: 9 V
• Maximum Dc Collector Current: 4 A
• Power Dissipation: 90 W
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current: 4 A
• Dc Collector/base Gain Hfe Min: 12
• Number Of Elements: 1
• Collector-emitter Voltage: 800V
• Collector-base Voltage: 1.6kV
• Emitter-base Voltage: 9V
• Collector Current (dc) (max): 4A
• Dc Current Gain (min): 12
• Operating Temp Range: -65C to 150C
• Operating Temperature Classification: Military
• Mounting: Through Hole
• Pin Count: 3 +Tab
• Package Type: TO-220
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Frequency - Transition: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 497-2638-5

BUL216
4/6
Inductive Fall Time
Reverse Biased SOA
Inductive Storage Time
RBSOA and Inductive Load Switching Test
Circuits
(1) Fast electronic switch
(2) Non-inductive Resistor
(3) Fast recovery rectifier