TRANSISTOR POWER NPN TO-220

BUL89

Manufacturer Part NumberBUL89
DescriptionTRANSISTOR POWER NPN TO-220
ManufacturerSTMicroelectronics
BUL89 datasheet
 


Specifications of BUL89

Transistor TypeNPNCurrent - Collector (ic) (max)12A
Voltage - Collector Emitter Breakdown (max)400VVce Saturation (max) @ Ib, Ic5V @ 2.4A, 12A
Current - Collector Cutoff (max)100µADc Current Gain (hfe) (min) @ Ic, Vce10 @ 5A, 5V
Power - Max110WMounting TypeThrough Hole
Package / CaseTO-220-3 (Straight Leads)Transistor PolarityNPN
Collector Emitter Voltage V(br)ceo400VPower Dissipation Pd110W
Dc Collector Current12ADc Current Gain Hfe10
Transistor Case StyleTO-220No. Of Pins3
SvhcNo SVHCRohs CompliantYes
Lead Free Status / RoHS StatusLead free / RoHS CompliantFrequency - Transition-
Other names497-6682-5
BUL89
  
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HIGH VOLTAGE CAPABILITY
MINIMUM LOT-TO-LOT SPREAD FOR
RELIABLE OPERATION
LOW BASE-DRIVE REQUIREMENTS
VERY HIGH SWITCHING SPEED
FULLY CHARACTERIZED AT 125
APPLICATIONS
ELECTRONIC TRANSFORMER FOR
HALOGEN LAMPS
SWITCH MODE POWER SUPPLIES
DESCRIPTION
The BUL89 is manufactured using high voltage
Multiepitaxial Mesa technology for cost-effective
high performance. It uses a Hollow Emitter
structure to enhance switching speeds.
The BUL series is designed for use in lighting
applications and low cost switch-mode power
supplies.
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
V
Collector-Emitter Voltage (V
CES
V
Collector-Emitter Voltage (I
CEO
V
Emitter-Base Voltage (I
EBO
I
Collector Current
C
I
Collector Peak Current (t
CM
I
Base Current
B
I
Base Peak Current (t
BM
P
Total Dissipation at T
tot
T
Storage Temperature
stg
T
Max. Operating Junction Temperature
j
September 2001
HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR
o
C
INTERNAL SCHEMATIC DIAGRAM
= 0)
BE
= 0)
B
= 0)
C
< 5 ms)
p
< 5 ms)
p
o
= 25
C
c
BUL89
3
2
1
TO-220
Value
Unit
850
V
400
V
9
V
12
A
25
A
6
A
12
A
110
W
o
-65 to 150
C
o
150
C
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BUL89 Summary of contents

  • Page 1

    ... APPLICATIONS ELECTRONIC TRANSFORMER FOR HALOGEN LAMPS SWITCH MODE POWER SUPPLIES DESCRIPTION The BUL89 is manufactured using high voltage Multiepitaxial Mesa technology for cost-effective high performance. It uses a Hollow Emitter structure to enhance switching speeds. The BUL series is designed for use in lighting applications and low cost switch-mode power supplies ...

  • Page 2

    ... BUL89 THERMAL DATA R Thermal Resistance Junction-Case thj-case ELECTRICAL CHARACTERISTICS (T Symbol Parameter I Collector Cut-off CES Current ( Collector Cut-off CEO Current ( Collector-Emitter CEO(sus) Sustaining Voltage ( Emitter-Base Voltage EBO ( Collector-Emitter CE(sat) Saturation Voltage V Base-Emitter BE(sat) Saturation Voltage h DC Current Gain FE INDUCTIVE LOAD t Storage Time ...

  • Page 3

    ... DC Current Gain Collector Emitter Saturation Voltage Inductive Load Fall Time DC Current Gain Base Emitter Saturation Voltage Inductive Load Storage Time BUL89 3/6 ...

  • Page 4

    ... BUL89 Reverse Biased SOA Figure 1: Inductive Load Switching Test Circuit 1) Fast electronic switch 2) Non-inductive Resistor 3) Fast recovery rectifier 4/6 ...

  • Page 5

    ... BUL89 inch TYP. MAX. 0.181 0.052 0.107 0.027 0.034 0.067 0.067 0.202 0.106 0.409 0.645 0.551 0.116 0.620 0.260 0.154 0.102 ...

  • Page 6

    ... BUL89 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice ...