MJ802 STMicroelectronics, MJ802 Datasheet - Page 2

• Manufacturer Part Number: MJ802
• Description: TRANSISTOR PWR NPN SILCN TO-3
• Manufacturer: STMicroelectronics

Specifications of MJ802

• Transistor Type: NPN
• Current - Collector (ic) (max): 30A
• Voltage - Collector Emitter Breakdown (max): 90V
• Vce Saturation (max) @ Ib, Ic: 800mV @ 750mA, 7.5A
• Dc Current Gain (hfe) (min) @ Ic, Vce: 25 @ 7.5A, 2V
• Power - Max: 200W
• Frequency - Transition: 2MHz
• Mounting Type: Chassis Mount
• Package / Case: TO-204, TO-3
• Transistor Polarity: NPN
• Mounting Style: Through Hole
• Collector- Emitter Voltage Vceo Max: 90 V
• Emitter- Base Voltage Vebo: 4 V
• Maximum Dc Collector Current: 30 A
• Power Dissipation: 200 W
• Continuous Collector Current: 30 A
• Dc Collector/base Gain Hfe Min: 25
• Maximum Operating Frequency: 2 MHz
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 497-6713; MJ802ST

MJ802
THERMAL DATA
ELECTRICAL CHARACTERISTICS (T
2/4
V
V
Pulsed: Pulse duration = 300 s, duty cycle 1.5 %
V
V
Symbol
R
CEO(sus)
CER(sus)
CE(sat)
BE(sat)
V
thj-case
h
I
I
CBO
EBO
BE
FE
f
T
Thermal Resistance Junction-case
Collector Cut-off
Current (I
Emitter Cut-off Current
(I
Collector-Emitter
Sustaining Voltage
(I
Collector-emitter
Sustaining Voltage
(R
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Base-Emitter Voltage
DC Current Gain
Transition Frequency
C
B
BE
= 0)
= 0)
= 100
Parameter
E
= 0)
)
V
V
V
I
I
I
I
I
I
I
f = 1 MHz
C
C
C
C
C
C
C
CB
CB
EB
= 200 mA
= 200 mA
= 7.5 A
= 7.5 A
= 7.5 A
= 7.5 A
= 1 A
= 4 V
= 100 V
= 100 V
case
= 25
Test Conditions
o
C unless otherwise specified)
V
T
I
I
V
V
B
B
CE
case
CE
CE
= 0.75 A
= 0.75 A
= 10 V
= 2 V
= 2 V
= 150
o
Max
C
Min.
100
90
25
2
0.875
Typ.
Max.
100
0.8
1.3
1.3
1
5
1
o
Unit
MHz
mA
mA
mA
C/W
V
V
V
V
V