PBSS5350Z,135 NXP Semiconductors, PBSS5350Z,135 Datasheet - Page 3

• Manufacturer Part Number: PBSS5350Z,135
• Description: TRANS NPN 50V 3A SOT223
• Manufacturer: NXP Semiconductors

Specifications of PBSS5350Z,135

• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Transistor Type: PNP
• Current - Collector (ic) (max): 3A
• Voltage - Collector Emitter Breakdown (max): 50V
• Vce Saturation (max) @ Ib, Ic: 300mV @ 200mA, 2A
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 2A, 2V
• Power - Max: 2W
• Frequency - Transition: 100MHz
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 65 C
• Configuration: Single Dual Collector
• Transistor Polarity: PNP
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 50 V
• Emitter- Base Voltage Vebo: 6 V
• Maximum Dc Collector Current: 3 A
• Power Dissipation: 2000 mW
• Maximum Operating Frequency: 100 MHz
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-4171-2; 934056527135; PBSS5350Z /T3; PBSS5350Z /T3

NXP Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Notes
1. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 1 cm
2. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 6 cm
3. For other mounting conditions see “Thermal considerations for SOT223 in the General Part of associated
THERMAL CHARACTERISTICS
Notes
1. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 1 cm.
2. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 6 cm
3. For other mounting conditions see “Thermal considerations for SOT223 in the General Part of associated
2003 May 13
V
V
V
I
I
I
P
T
T
T
R
C
CM
BM
SYMBOL
SYMBOL
stg
j
amb
CBO
CEO
EBO
tot
50 V low V
th j-a
Handbook”.
Handbook”.
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
thermal resistance from junction to ambient
CEsat
PARAMETER
PNP transistor
PARAMETER
open emitter
open base
open collector
T
T
amb
amb
≤ 25 °C; notes 1 and 3
≤ 25 °C; notes 2 and 3
CONDITIONS
3
in free air; notes 1 and 3
in free air; notes 2 and 3
CONDITIONS
−
−
−
−
−
−
−
−
−65
−
−65
MIN.
VALUE
62.5
92
−60
−50
−6
−3
−5
−1
1.35
2
+150
150
+150
PBSS5350Z
MAX.
Product data sheet
V
V
V
A
A
A
W
W
°C
°C
°C
UNIT
K/W
K/W
2
2
2
UNIT
.
.
.