PBSS5350Z,135 NXP Semiconductors, PBSS5350Z,135 Datasheet - Page 4

TRANS NPN 50V 3A SOT223

PBSS5350Z,135

Manufacturer Part Number
PBSS5350Z,135
Description
TRANS NPN 50V 3A SOT223
Manufacturer
NXP Semiconductors
Datasheet

Specifications of PBSS5350Z,135

Package / Case
SOT-223 (3 leads + Tab), SC-73, TO-261
Transistor Type
PNP
Current - Collector (ic) (max)
3A
Voltage - Collector Emitter Breakdown (max)
50V
Vce Saturation (max) @ Ib, Ic
300mV @ 200mA, 2A
Dc Current Gain (hfe) (min) @ Ic, Vce
100 @ 2A, 2V
Power - Max
2W
Frequency - Transition
100MHz
Mounting Type
Surface Mount
Minimum Operating Temperature
- 65 C
Configuration
Single Dual Collector
Transistor Polarity
PNP
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
50 V
Emitter- Base Voltage Vebo
6 V
Maximum Dc Collector Current
3 A
Power Dissipation
2000 mW
Maximum Operating Frequency
100 MHz
Maximum Operating Temperature
+ 150 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
568-4171-2
934056527135
PBSS5350Z /T3
PBSS5350Z /T3

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
PBSS5350Z,135
Manufacturer:
NXP/恩智浦
Quantity:
20 000
NXP Semiconductors
CHARACTERISTICS
T
Note
1. Pulse test: t
2003 May 13
I
I
h
V
R
V
V
f
C
amb
CBO
EBO
T
SYMBOL
FE
CEsat
BEsat
BEon
50 V low V
CEsat
c
= 25 °C unless otherwise specified.
collector-base cut-off current V
emitter-base cut-off current
DC current gain
collector-emitter saturation
voltage
equivalent on-resistance
base-emitter saturation
voltage
base-emitter turn-on voltage V
transition frequency
collector capacitance
p
≤ 300 μs; δ ≤ 0.02.
CEsat
PARAMETER
PNP transistor
V
V
V
I
I
I
I
I
I
f = 100 MHz
V
C
C
C
C
C
C
CB
CB
EB
CE
CE
CB
I
I
I
= −500 mA; I
= −1 A; I
= −2 A; I
= −2 A; I
= −2 A; I
= −100 mA; V
C
C
C
= −5 V; I
= −50 V; I
= −50 V; I
= −2 V;
= −2 V; I
= −10 V; I
= −500 mA
= −1 A; note 1
= −2 A; note 1
B
B
B
B
CONDITIONS
= −50 mA
= −200 mA; note 1
= −200 mA; note 1
= −200 mA; note 1
C
C
4
E
E
E
= 0
= −1 A; note 1
B
= 0
= 0; T
= I
CE
= −50 mA
e
= −5 V;
= 0; f = 1 MHz
j
= 150 °C
200
200
100
100
MIN.
120
TYP.
PBSS5350Z
Product data sheet
−100
−50
−100
−100
−180
−300
<150
−1.2
−1.1
40
MAX.
nA
μA
nA
mV
mV
mV
V
V
MHz
pF
UNIT

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