TRANSISTOR NPN 400V 4A TO-220

BUL742A

Manufacturer Part NumberBUL742A
DescriptionTRANSISTOR NPN 400V 4A TO-220
ManufacturerSTMicroelectronics
BUL742A datasheet
 


Specifications of BUL742A

Transistor TypeNPNCurrent - Collector (ic) (max)4A
Voltage - Collector Emitter Breakdown (max)400VVce Saturation (max) @ Ib, Ic1.5V @ 1A, 3.5A
Current - Collector Cutoff (max)250µADc Current Gain (hfe) (min) @ Ic, Vce16 @ 800mA, 3V
Power - Max70WMounting TypeThrough Hole
Package / CaseTO-220-3 (Straight Leads)Lead Free Status / RoHS StatusLead free / RoHS Compliant
Frequency - Transition-Other names497-3130-5
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HIGH VOLTAGE CAPABILITY
LOW SPREAD OF DYNAMIC PARAMETERS
MINIMUM LOT-TO-LOT SPREAD FOR
RELIABLE OPERATION
VERY HIGH SWITCHING SPEED
APPLICATIONS
FOUR LAMP ELECTRONIC BALLAST FOR:
120 V MAINS IN PUSH-PULL
CONFIGURATION;
277 V MAINS IN HALF BRIDGE CURRENT
FEED CONFIGURATION.
SWITCH MODE POWER SUPPLIES
DESCRIPTION
The BUL742A is manufactured using high voltage
Multi
Epitaxial Planar
technology for high
switching speeds and high voltage capability.
Thanks to an increased intermediate layer, it has
an intrinsic ruggedness which enables the
transistor to withstand an high collector current
level during breakdown condition, without using
the transil protection usually necessary in typical
converters for lamp ballast.
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
V
Collector-Emitter Voltage (V
CES
V
Collector-Emitter Voltage (I
CEO
V
Emitter-Base Voltage
EBO
(I
= 0, I
2 A, t
C
B
I
Collector Current
C
I
Collector Peak Current (t
CM
I
Base Current
B
I
Base Peak Current (t
BM
P
Total Dissipation at Tc = 25
tot
T
Storage Temperature
stg
T
Max. Operating Junction Temperature
j
October 2003
HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR
= 0)
BE
= 0)
B
o
< 10 s, T
< 150
C)
p
j
<5 ms)
p
<5 ms)
p
o
C
BUL742A
3
2
1
TO-220
INTERNAL SCHEMATIC DIAGRAM
Value
950
400
V
(BR)EBO
4
8
2
4
70
-65 to 150
150
Unit
V
V
V
A
A
A
A
W
o
C
o
C
1/5

BUL742A Summary of contents

  • Page 1

    ... V MAINS IN PUSH-PULL CONFIGURATION; 277 V MAINS IN HALF BRIDGE CURRENT FEED CONFIGURATION. SWITCH MODE POWER SUPPLIES DESCRIPTION The BUL742A is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capability. Thanks to an increased intermediate layer, it has an intrinsic ruggedness which enables the ...

  • Page 2

    ... BUL742A THERMAL DATA R Thermal Resistance Junction-Case thj-case R Thermal Resistance Junction-Ambient thj-amb ELECTRICAL CHARACTERISTICS (T Symbol Parameter I Collector Cut-off CES Current ( Collector Cut-off CEO Current ( Collector-Emitter CEO(sus) Sustaining Voltage ( Emitter-Base (BR)EBO Breakdown Voltage ( Collector-Emitter CE(sat) Saturation Voltage V Base-Emitter BE(sat) Saturation Voltage h DC Current Gain ...

  • Page 3

    ... Figure 1: Energy Rating Test Circuit Figure 2: Resistive Load Switching Test Circuit BUL742A 3/5 ...

  • Page 4

    ... BUL742A DIM. MIN. A 4.40 C 1.23 D 2.40 E 0.49 F 0.61 F1 1.14 F2 1.14 G 4.95 G1 2.40 H2 10. 13.00 L5 2.65 L6 15.25 L7 6.20 L9 3.50 M DIA. 3.75 4/5 TO-220 MECHANICAL DATA mm TYP. MAX. 4.60 1.32 2.72 0.70 0.88 1.70 1.70 5.15 2.70 10.40 16.40 14.00 2.95 15.75 6.60 3 ...

  • Page 5

    ... Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. The ST logo is a trademark of STMicroelectronics. All other names are the property of their respective owners. © 2003 STMicroelectronics – All Rights reserved STMicroelectronics GROUP OF COMPANIES http://www.st.com BUL742A 5/5 ...