PBSS4350X,115 NXP Semiconductors, PBSS4350X,115 Datasheet

TRANS NPN 50V 3A SOT89

PBSS4350X,115

Manufacturer Part Number
PBSS4350X,115
Description
TRANS NPN 50V 3A SOT89
Manufacturer
NXP Semiconductors
Datasheet
1.PBSS4350X115.pdf (12 pages)

Specifications of PBSS4350X,115

Package / Case
SC-62, SOT-89, TO-243 (3 Leads + Tab)
Transistor Type
NPN
Current - Collector (ic) (max)
3A
Voltage - Collector Emitter Breakdown (max)
50V
Vce Saturation (max) @ Ib, Ic
370mV @ 300mA, 3A
Current - Collector Cutoff (max)
100nA
Dc Current Gain (hfe) (min) @ Ic, Vce
300 @ 1A, 2V
Power - Max
1.6W
Frequency - Transition
100MHz
Mounting Type
Surface Mount
Minimum Operating Temperature
- 65 C
Configuration
Single
Transistor Polarity
NPN
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
50 V
Emitter- Base Voltage Vebo
5 V
Maximum Dc Collector Current
3 A
Power Dissipation
1600 mW
Maximum Operating Frequency
100 MHz
Maximum Operating Temperature
+ 150 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
568-4159-2
934055628115
PBSS4350X T/R
PBSS4350X T/R
Product specification
Supersedes data of 2003 Nov 21
book, halfpage
DATA SHEET
PBSS4350X
50 V, 3 A
NPN low V
DISCRETE SEMICONDUCTORS
CEsat
M3D109
(BISS) transistor
2004 Nov 04

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PBSS4350X,115 Summary of contents

Page 1

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage PBSS4350X NPN low V Product specification Supersedes data of 2003 Nov 21 M3D109 (BISS) transistor CEsat 2004 Nov 04 ...

Page 2

Philips Semiconductors NPN low V (BISS) transistor CEsat FEATURES SOT89 (SC-62) package Low collector-emitter saturation voltage V High collector current capability: I Higher efficiency leading to less heat generation Reduced printed-circuit board requirements. APPLICATIONS Power management ...

Page 3

Philips Semiconductors NPN low V (BISS) transistor CEsat ORDERING INFORMATION TYPE NUMBER NAME PBSS4350X SC-62 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER V collector-base voltage CBO V collector-emitter voltage ...

Page 4

Philips Semiconductors NPN low V (BISS) transistor CEsat 2 handbook, halfpage P tot (W) (1) 1.6 (2) 1.2 (3) 0.8 (4) 0 (1) Ceramic PCB (3) FR4 PCB; 1 ...

Page 5

Philips Semiconductors NPN low V (BISS) transistor CEsat THERMAL CHARACTERISTICS SYMBOL PARAMETER R thermal resistance from junction to ambient th(j-a) R thermal resistance from junction to soldering point th(j-s) Notes 1. Device mounted on a FR4 ...

Page 6

Philips Semiconductors NPN low V (BISS) transistor CEsat (K/W) ( (2) (3) (4) (5) (6) 10 (7) (8) (9) (10 Mounted on FR4 ...

Page 7

Philips Semiconductors NPN low V (BISS) transistor CEsat CHARACTERISTICS unless otherwise specified. amb SYMBOL PARAMETER I collector-base cut-off current CBO I collector-emitter cut-off current CES I emitter-base cut-off current EBO h DC ...

Page 8

Philips Semiconductors NPN low V (BISS) transistor CEsat 800 handbook, halfpage h FE (1) 600 (2) 400 (3) 200 ( 100 C. amb ...

Page 9

Philips Semiconductors NPN low V (BISS) transistor CEsat 1.4 handbook, halfpage V BEsat ( (2) T ...

Page 10

Philips Semiconductors NPN low V (BISS) transistor CEsat PACKAGE OUTLINE Plastic surface mounted package; collector pad for good heat transfer; 3 leads w M DIMENSIONS (mm are the original dimensions) UNIT ...

Page 11

Philips Semiconductors NPN low V (BISS) transistor CEsat DATA SHEET STATUS DATA SHEET PRODUCT LEVEL (1) STATUS STATUS I Objective data Development II Preliminary data Qualification III Product data Production Notes 1. Please consult the most ...

Page 12

Philips Semiconductors – a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com. For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com. © Koninklijke Philips Electronics N.V. 2004 All rights are reserved. Reproduction in whole or in part is prohibited ...

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