PBSS4350X,115 NXP Semiconductors, PBSS4350X,115 Datasheet - Page 3

• Manufacturer Part Number: PBSS4350X,115
• Description: TRANS NPN 50V 3A SOT89
• Manufacturer: NXP Semiconductors

Specifications of PBSS4350X,115

• Package / Case: SC-62, SOT-89, TO-243 (3 Leads + Tab)
• Transistor Type: NPN
• Current - Collector (ic) (max): 3A
• Voltage - Collector Emitter Breakdown (max): 50V
• Vce Saturation (max) @ Ib, Ic: 370mV @ 300mA, 3A
• Current - Collector Cutoff (max): 100nA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 300 @ 1A, 2V
• Power - Max: 1.6W
• Frequency - Transition: 100MHz
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 65 C
• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 50 V
• Emitter- Base Voltage Vebo: 5 V
• Maximum Dc Collector Current: 3 A
• Power Dissipation: 1600 mW
• Maximum Operating Frequency: 100 MHz
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-4159-2; 934055628115; PBSS4350X T/R; PBSS4350X T/R

Philips Semiconductors
ORDERING INFORMATION
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Notes
1. Device mounted on a FR4 printed-circuit board; single-sided copper; tin-plated; standard footprint.
2. Device mounted on a FR4 printed-circuit board; single-sided copper; tin-plated; mounting pad for collector 1 cm
3. Device mounted on a FR4 printed-circuit board; single-sided copper; tin-plated; mounting pad for collector 6 cm
4. Device mounted on a ceramic printed-circuit board 7 cm
2004 Nov 04
PBSS4350X
V
V
V
I
I
I
P
T
T
T
TYPE NUMBER
SYMBOL
C
CM
B
stg
j
amb
CBO
CEO
EBO
tot
50 V, 3 A
NPN low V
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
base current (DC)
total power dissipation
storage temperature
junction temperature
ambient temperature
CEsat
NAME
SC-62
PARAMETER
(BISS) transistor
plastic surface mounted package; collector pad for good heat
transfer; 3 leads
open emitter
open base
open collector
note 4
limited by T
T
amb
note 1
note 2
note 3
note 4
3
25 C
2
DESCRIPTION
, single-sided copper, tin-plated.
CONDITIONS
PACKAGE
j(max)
65
65
MIN.
50
50
5
3
5
0.5
550
1
1.4
1.6
+150
150
+150
PBSS4350X
Product specification
MAX.
VERSION
SOT89
V
V
V
A
A
A
mW
W
W
W
C
C
C
UNIT
2
2
.
.