BC847BW,135 NXP Semiconductors, BC847BW,135 Datasheet - Page 2

• Manufacturer Part Number: BC847BW,135
• Description: TRANSISTOR NPN 45V 100MA SOT323
• Manufacturer: NXP Semiconductors

Specifications of BC847BW,135

• Package / Case: SC-70-3, SOT-323-3
• Transistor Type: NPN
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 45V
• Vce Saturation (max) @ Ib, Ic: 400mV @ 5mA, 100mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 200 @ 2mA, 5V
• Power - Max: 200mW
• Frequency - Transition: 100MHz
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 65 C
• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 45 V
• Emitter- Base Voltage Vebo: 6 V
• Maximum Dc Collector Current: 0.1 A
• Power Dissipation: 200 mW
• Maximum Operating Frequency: 100 MHz
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934021770135; BC847BW /T3; BC847BW /T3

NXP Semiconductors
2. Pinning information
BC847_BC547_SER_7
Product data sheet
1.2 Features
1.3 Applications
1.4 Quick reference data
I
I
I
I
Table 2.
Table 3.
Symbol
V
I
h
Pin
SOT23, SOT323, SOT416
1
2
3
SOT883
1
2
3
C
FE
CEO
Low current
Low voltage
Three different gain selections
General-purpose switching and amplification
Parameter
collector-emitter voltage
collector current
DC current gain
Quick reference data
Pinning
h
h
h
FE
FE
FE
Description
base
emitter
collector
base
emitter
collector
group A
group B
group C
Rev. 07 — 10 December 2008
Conditions
open base
V
CE
= 5 V; I
45 V, 100 mA NPN general-purpose transistors
C
BC847/BC547 series
= 2 mA
Simplified outline
1
2
1
Transparent
top view
Min
-
-
110
110
200
420
3
006aaa144
2
3
Typ
-
-
-
180
290
520
Graphic symbol
© NXP B.V. 2008. All rights reserved.
Max
45
100
800
220
450
800
1
1
sym021
sym021
3
2
3
2
Unit
V
mA
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