PBSS3515E,115 NXP Semiconductors, PBSS3515E,115 Datasheet - Page 10

• Manufacturer Part Number: PBSS3515E,115
• Description: TRANS NPN 15V 0.5A SOT416
• Manufacturer: NXP Semiconductors
• Series: -r

Specifications of PBSS3515E,115

• Package / Case: EMT3 (SOT-416, SC-75-3)
• Mounting Type: Surface Mount
• Power - Max: 250mW
• Current - Collector (ic) (max): 500mA
• Voltage - Collector Emitter Breakdown (max): 15V
• Transistor Type: PNP
• Frequency - Transition: 280MHz
• Dc Current Gain (hfe) (min) @ Ic, Vce: 150 @ 100mA, 2V
• Vce Saturation (max) @ Ib, Ic: 250mV @ 50mA, 500mA
• Minimum Operating Temperature: - 65 C
• Configuration: Single
• Transistor Polarity: PNP
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 15 V
• Emitter- Base Voltage Vebo: 6 V
• Maximum Dc Collector Current: 0.5 A
• Power Dissipation: 250 mW
• Maximum Operating Frequency: 280 MHz
• Maximum Operating Temperature: + 150 C
• Current - Collector Cutoff (max): -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934059167115::PBSS3515E T/R::PBSS3515E T/R

NXP Semiconductors
12. Revision history
Table 9.
PBSS3515E_2
Product data sheet
Document ID
PBSS3515E_2
Modifications:
PBSS3515E_1
Revision history
Release date
20090427
20050418
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The format of this data sheet has been redesigned to comply with the new identity
guidelines of NXP Semiconductors.
Legal texts have been adapted to the new company name where appropriate.
Figure
Table 6 “Thermal
Table 7
Figure
Section 13 “Legal
2: added
5,
“Characteristics”: switching times added
8
and 9: amended
Data sheet status
Product data sheet
Product data sheet
characteristics”: enhanced
information”: updated
Rev. 02 — 27 April 2009
15 V, 0.5 A PNP low V
Change notice
-
-
PBSS3515E
Supersedes
PBSS3515E_1
-
CEsat
© NXP B.V. 2009. All rights reserved.
(BISS) transistor
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