PBSS305PD,115 NXP Semiconductors, PBSS305PD,115 Datasheet - Page 13
PBSS305PD,115
Manufacturer Part Number
PBSS305PD,115
Description
TRANS PNP 100V 2A SC-74
Manufacturer
NXP Semiconductors
Series
-r
Datasheet
1.PBSS305PD115.pdf
(15 pages)
Specifications of PBSS305PD,115
Package / Case
SC-74-6
Transistor Type
PNP
Current - Collector (ic) (max)
2A
Voltage - Collector Emitter Breakdown (max)
100V
Vce Saturation (max) @ Ib, Ic
395mV @ 300mA, 3A
Current - Collector Cutoff (max)
100nA
Dc Current Gain (hfe) (min) @ Ic, Vce
145 @ 1A, 2V
Power - Max
1.1W
Frequency - Transition
110MHz
Mounting Type
Surface Mount
Minimum Operating Temperature
- 65 C
Configuration
Single Quad Collector
Transistor Polarity
PNP
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
100 V
Emitter- Base Voltage Vebo
5 V
Maximum Dc Collector Current
2 A
Power Dissipation
2500 mW
Maximum Operating Frequency
110 MHz
Maximum Operating Temperature
+ 150 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934060017115
PBSS305PD T/R
PBSS305PD T/R
PBSS305PD T/R
PBSS305PD T/R
NXP Semiconductors
12. Revision history
Table 9.
PBSS305PD_2
Product data sheet
Document ID
PBSS305PD_2
Modifications:
PBSS305PD_1
Revision history
Release date
20091208
20060530
•
•
•
This data sheet was changed to reflect the new company name NXP Semiconductors,
including new legal definitions and disclaimers. No changes were made to the technical
content.
Figure 5 “Transient thermal impedance from junction to ambient as a function of pulse
duration; typical
Figure 18 “Wave soldering footprint SOT457
values”: updated
Rev. 02 — 8 December 2009
Data sheet status
Product data sheet
Product data sheet
100 V, 2 A PNP low V
Change notice
-
-
(SC-74)”: updated
PBSS305PD
Supersedes
PBSS305PD_1
-
CEsat
© NXP B.V. 2009. All rights reserved.
(BISS) transistor
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