PBSS305PD,115 NXP Semiconductors, PBSS305PD,115 Datasheet - Page 6

TRANS PNP 100V 2A SC-74

PBSS305PD,115

Manufacturer Part Number
PBSS305PD,115
Description
TRANS PNP 100V 2A SC-74
Manufacturer
NXP Semiconductors
Series
-r
Datasheet

Specifications of PBSS305PD,115

Package / Case
SC-74-6
Transistor Type
PNP
Current - Collector (ic) (max)
2A
Voltage - Collector Emitter Breakdown (max)
100V
Vce Saturation (max) @ Ib, Ic
395mV @ 300mA, 3A
Current - Collector Cutoff (max)
100nA
Dc Current Gain (hfe) (min) @ Ic, Vce
145 @ 1A, 2V
Power - Max
1.1W
Frequency - Transition
110MHz
Mounting Type
Surface Mount
Minimum Operating Temperature
- 65 C
Configuration
Single Quad Collector
Transistor Polarity
PNP
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
100 V
Emitter- Base Voltage Vebo
5 V
Maximum Dc Collector Current
2 A
Power Dissipation
2500 mW
Maximum Operating Frequency
110 MHz
Maximum Operating Temperature
+ 150 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934060017115
PBSS305PD T/R
PBSS305PD T/R
NXP Semiconductors
PBSS305PD_2
Product data sheet
Fig 4.
Fig 5.
Z
Z
(K/W)
(K/W)
th(j-a)
th(j-a)
10
10
10
10
10
10
10
10
−1
−1
1
1
3
2
10
3
2
10
FR4 PCB, mounting pad for collector 6 cm
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
Ceramic PCB, Al
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
−5
−5
duty cycle =
duty cycle =
0.05
0.02
0.01
0.05
0.02
0.01
0.5
0.2
0.1
0.5
0.2
0.1
1
0
1
0
0.75
0.33
0.75
0.33
10
10
−4
−4
2
O
3
, standard footprint
10
10
−3
−3
10
10
2
Rev. 02 — 8 December 2009
−2
−2
10
10
−1
−1
100 V, 2 A PNP low V
1
1
10
10
PBSS305PD
CEsat
10
10
2
2
© NXP B.V. 2009. All rights reserved.
(BISS) transistor
t
t
p
p
006aaa273
006aaa751
(s)
(s)
10
10
3
3
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