PBSS304NX,115 NXP Semiconductors, PBSS304NX,115 Datasheet - Page 6

• Manufacturer Part Number: PBSS304NX,115
• Description: TRANS NPN 60V 4.7A SOT-89
• Manufacturer: NXP Semiconductors
• Series: -r

Specifications of PBSS304NX,115

• Transistor Type: NPN
• Current - Collector (ic) (max): 4.7A
• Voltage - Collector Emitter Breakdown (max): 60V
• Vce Saturation (max) @ Ib, Ic: 245mV @ 235mA, 4.7A
• Dc Current Gain (hfe) (min) @ Ic, Vce: 250 @ 2A, 2V
• Power - Max: 2.1W
• Frequency - Transition: 130MHz
• Mounting Type: Surface Mount
• Package / Case: SC-62, SOT-89, TO-243 (3 Leads + Tab)
• Current - Collector Cutoff (max): -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934059011115; PBSS304NX T/R; PBSS304NX T/R

NXP Semiconductors
7. Characteristics
PBSS304NX_2
Product data sheet
Table 7.
T
[1]
Symbol
I
I
h
V
R
V
V
t
t
t
t
t
t
f
C
CBO
EBO
d
r
on
s
f
off
T
amb
FE
CEsat
BEsat
BEon
CEsat
c
Pulse test: t
= 25
°
C unless otherwise specified.
Parameter
collector-base cut-off
current
emitter-base cut-off
current
DC current gain
collector-emitter
saturation voltage
collector-emitter
saturation resistance
base-emitter saturation
voltage
base-emitter turn-on
voltage
delay time
rise time
turn-on time
storage time
fall time
turn-off time
transition frequency
collector capacitance
Characteristics
p
≤ 300 μs; δ ≤ 0.02.
Rev. 02 — 20 November 2009
Conditions
V
V
T
V
V
V
V
V
V
I
I
I
I
I
I
I
I
I
I
I
I
V
V
I
I
V
f = 100 MHz
V
f = 1 MHz
C
C
C
C
C
C
C
C
C
C
C
C
Bon
Boff
j
CB
CB
EB
CE
CE
CE
CE
CE
CE
CC
CE
CB
= 150 °C
= 0.5 A; I
= 1 A; I
= 1 A; I
= 2 A; I
= 4 A; I
= 4 A; I
= 4 A; I
= 4.7 A; I
= 4 A; I
= 4 A; I
= 1 A; I
= 4 A; I
= 0.15 A;
= −0.15 A
= 5 V; I
= 60 V; I
= 60 V; I
= 2 V; I
= 2 V; I
= 2 V; I
= 2 V; I
= 2 V; I
= 2 V; I
= 10 V; I
= 10 V; I
= 12.5 V; I
B
B
B
B
B
B
B
B
B
B
60 V, 4.7 A NPN low V
= 50 mA
= 10 mA
= 40 mA
= 200 mA
= 400 mA
= 80 mA
= 200 mA
= 80 mA
= 100 mA
= 400 mA
C
C
C
C
C
C
B
B
C
E
E
C
E
= 0 A
= 50 mA
= 235 mA
= 0.5 A
= 1 A
= 2 A
= 4 A
= 6 A
= 2 A
= 0 A
= 0 A;
= i
= 100 mA;
C
= 3 A;
e
= 0 A;
[1]
[1]
[1]
[1]
[1]
[1]
[1]
[1]
[1]
[1]
[1]
[1]
[1]
[1]
[1]
[1]
[1]
[1]
Min
-
-
-
300
300
250
150
75
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
PBSS304NX
CEsat
Typ
-
-
-
520
500
470
250
115
25
50
85
105
145
140
190
170
37
48
0.82
0.94
0.75
15
95
110
360
195
555
130
48
© NXP B.V. 2009. All rights reserved.
(BISS) transistor
Max
100
50
100
-
-
-
-
-
35
70
120
150
210
200
290
245
53
73
0.9
1.05
0.85
-
-
-
-
-
-
-
70
Unit
nA
μA
nA
mV
mV
mV
mV
mV
mV
mV
mV
mΩ
mΩ
V
V
V
ns
ns
ns
ns
ns
ns
MHz
pF
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