PBSS306PX,115 NXP Semiconductors, PBSS306PX,115 Datasheet

TRANS PNP 100V 3.7A SOT-89

PBSS306PX,115

Manufacturer Part Number
PBSS306PX,115
Description
TRANS PNP 100V 3.7A SOT-89
Manufacturer
NXP Semiconductors
Series
-r
Datasheet

Specifications of PBSS306PX,115

Package / Case
SC-62, SOT-89, TO-243 (3 Leads + Tab)
Transistor Type
PNP
Current - Collector (ic) (max)
3.7A
Voltage - Collector Emitter Breakdown (max)
100V
Vce Saturation (max) @ Ib, Ic
300mV @ 400mA, 4A
Dc Current Gain (hfe) (min) @ Ic, Vce
100 @ 2A, 2V
Power - Max
2.1W
Frequency - Transition
100MHz
Mounting Type
Surface Mount
Minimum Operating Temperature
- 65 C
Configuration
Single
Transistor Polarity
PNP
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
100 V
Emitter- Base Voltage Vebo
5 V
Maximum Dc Collector Current
3.7 A
Power Dissipation
2100 mW
Maximum Operating Frequency
100 MHz
Maximum Operating Temperature
+ 150 C
Current - Collector Cutoff (max)
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
934059019115
PBSS306PX T/R
PBSS306PX T/R
1. Product profile
1.1 General description
1.2 Features
1.3 Applications
1.4 Quick reference data
PNP low V
(SC-62/TO-243) small and flat lead Surface-Mounted Device (SMD) plastic package.
NPN complement: PBSS306NX.
Table 1.
[1]
Symbol
V
I
I
R
C
CM
CEO
CEsat
PBSS306PX
100 V, 3.7 A PNP low V
Rev. 02 — 11 December 2009
Low collector-emitter saturation voltage V
High collector current capability I
High collector current gain (h
High efficiency due to less heat generation
Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
High-voltage DC-to-DC conversion
High-voltage MOSFET gate driving
High-voltage motor control
High-voltage power switches (e.g. motors, fans)
Thin Film Transistor (TFT) backlight inverter
Automotive applications
Pulse test: t
CEsat
Quick reference data
Parameter
collector-emitter voltage
collector current
peak collector current
collector-emitter saturation
resistance
p
≤ 300 μs; δ ≤ 0.02.
Breakthrough In Small Signal (BISS) transistor in a SOT89
FE
) at high I
CEsat
C
and I
Conditions
open base
single pulse;
t
I
I
p
C
B
≤ 1 ms
= −4 A;
= −400 mA
(BISS) transistor
CM
C
CEsat
[1]
Min
-
-
-
-
Typ
-
-
-
52
Product data sheet
Max
−100
−3.7
−7.4
75
Unit
V
A
A

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PBSS306PX,115 Summary of contents

Page 1

PBSS306PX 100 V, 3.7 A PNP low V Rev. 02 — 11 December 2009 1. Product profile 1.1 General description PNP low V (SC-62/TO-243) small and flat lead Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS306NX. 1.2 Features Low collector-emitter ...

Page 2

... NXP Semiconductors 2. Pinning information Table 2. Pin Ordering information Table 3. Type number PBSS306PX 4. Marking Table 4. Type number PBSS306PX [ made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China PBSS306PX_2 Product data sheet Pinning Description emitter collector base Ordering information Package Name Description SC-62 plastic surface-mounted package ...

Page 3

... NXP Semiconductors 5. Limiting values Table 5. In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol V CBO V CEO V EBO tot amb T stg [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm ...

Page 4

... NXP Semiconductors 6. Thermal characteristics Table 6. Symbol R th(j-a) R th(j-sp) [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm [3] Device mounted on a ceramic PCB th(j-a) (K/W) δ 0.75 ...

Page 5

... NXP Semiconductors 2 10 δ 0.75 Z th(j-a) 0.50 (K/W) 0.33 0.20 10 0.10 0.05 0.02 0. −1 10 −5 − FR4 PCB, mounting pad for collector 6 cm Fig 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 2 10 δ 0.75 th(j-a) (K/W) ...

Page 6

... NXP Semiconductors 7. Characteristics Table amb Symbol I CBO I EBO CEsat R CEsat V BEsat V BEon off [1] Pulse test: t PBSS306PX_2 Product data sheet Characteristics ° C unless otherwise specified. Parameter Conditions = − collector-base cut-off V CB current = − 150 ° − emitter-base cut-off V EB current = − current gain ...

Page 7

... NXP Semiconductors 600 h FE (1) 400 (2) 200 (3) 0 −1 −10 −1 −10 = − 100 °C (1) T amb = 25 °C (2) T amb = −55 °C (3) T amb Fig 5. DC current gain as a function of collector current; typical values −1 (V) −0.8 (1) (2) −0.4 (3) 0 −1 −10 −1 − ...

Page 8

... NXP Semiconductors −10 V CEsat (V) −1 −1 −10 (1) (2) (3) −2 −10 −1 −10 −1 − 100 °C (1) T amb = 25 °C (2) T amb = −55 °C (3) T amb Fig 9. Collector-emitter saturation voltage as a function of collector current; typical values CEsat (Ω −1 10 −2 10 −1 −10 − ...

Page 9

... NXP Semiconductors 8. Test information − − Fig 13. BISS transistor switching time definition Fig 14. Test circuit for switching times PBSS306PX_2 Product data sheet (probe) oscilloscope 450 Ω −12 − −0. Bon Rev. 02 — 11 December 2009 PBSS306PX 100 V, 3.7 A PNP low V CEsat − I ...

Page 10

... NXP Semiconductors 9. Package outline Fig 15. Package outline SOT89 (SC-62/TO-243) 10. Packing information Table 8. The indicated -xxx are the last three digits of the 12NC ordering code. Type number PBSS306PX [1] For further information and the availability of packing methods, see PBSS306PX_2 Product data sheet 4.6 4 ...

Page 11

... NXP Semiconductors 11. Soldering 0.85 4.60 Fig 16. Reflow soldering footprint Fig 17. Wave soldering footprint PBSS306PX_2 Product data sheet 4.75 2.25 2.00 1.90 1.20 0.20 1.20 1.20 1. (3x) 3.70 3.95 SOT89 standard mounting conditions for reflow soldering 6.60 2. 1.50 0.70 5.30 Not recommended for wave soldering Rev. 02 — ...

Page 12

... NXP Semiconductors 12. Mounting 40 mm Fig 18. FR4 PCB, standard footprint; PBSS306PX_2 Product data sheet 3.96 mm 1.6 mm 001aaa234 PCB thickness: FR4 PCB = 1.6 mm ceramic PCB = 0.635 mm ceramic PCB standard 2 3 footprint Rev. 02 — 11 December 2009 PBSS306PX 100 V, 3.7 A PNP low V (BISS) transistor ...

Page 13

... Revision history Document ID Release date PBSS306PX_2 20091211 • Modifications: This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content. • Figure 15 “Package outline SOT89 • Figure 16 “Reflow soldering • ...

Page 14

... Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice ...

Page 15

... NXP Semiconductors 16. Contents 1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.1 General description . . . . . . . . . . . . . . . . . . . . . 1 1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . 1 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 3 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 5 Limiting values Thermal characteristics . . . . . . . . . . . . . . . . . . 4 7 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 6 8 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 9 9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10 10 Packing information . . . . . . . . . . . . . . . . . . . . 10 11 Soldering ...

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