PBSS306PX,115 NXP Semiconductors, PBSS306PX,115 Datasheet - Page 7

• Manufacturer Part Number: PBSS306PX,115
• Description: TRANS PNP 100V 3.7A SOT-89
• Manufacturer: NXP Semiconductors
• Series: -r

Specifications of PBSS306PX,115

• Package / Case: SC-62, SOT-89, TO-243 (3 Leads + Tab)
• Transistor Type: PNP
• Current - Collector (ic) (max): 3.7A
• Voltage - Collector Emitter Breakdown (max): 100V
• Vce Saturation (max) @ Ib, Ic: 300mV @ 400mA, 4A
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 2A, 2V
• Power - Max: 2.1W
• Frequency - Transition: 100MHz
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 65 C
• Configuration: Single
• Transistor Polarity: PNP
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 100 V
• Emitter- Base Voltage Vebo: 5 V
• Maximum Dc Collector Current: 3.7 A
• Power Dissipation: 2100 mW
• Maximum Operating Frequency: 100 MHz
• Maximum Operating Temperature: + 150 C
• Current - Collector Cutoff (max): -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934059019115; PBSS306PX T/R; PBSS306PX T/R

NXP Semiconductors
PBSS306PX_2
Product data sheet
Fig 5.
Fig 7.
V
h
(V)
(1) T
(2) T
(3) T
(1) T
(2) T
(3) T
FE
−1.2
BE
−0.8
−0.4
600
400
200
−10
−10
0
0
V
DC current gain as a function of collector
current; typical values
V
current; typical values
Base-emitter voltage as a function of collector
−1
−1
amb
amb
amb
amb
amb
amb
CE
CE
= −2 V
= −2 V
= 100 °C
= 25 °C
= −55 °C
= −55 °C
= 25 °C
= 100 °C
−1
−1
(1)
(2)
(3)
(1)
(2)
(3)
−10
−10
−10
−10
2
2
−10
−10
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006aaa646
3
I
3
I
C
C
(mA)
(mA)
Rev. 02 — 11 December 2009
−10
−10
4
4
Fig 6.
Fig 8.
V
BEsat
(A)
(V)
I
(1) T
(2) T
(3) T
C
−1.2
−0.8
−0.4
−14
−12
−10
−8
−6
−4
−2
−10
0
0
100 V, 3.7 A PNP low V
0
T
Collector current as a function of
collector-emitter voltage; typical values
I
Base-emitter saturation voltage as a function
of collector current; typical values
C
−1
amb
amb
amb
amb
/I
B
= 20
= 25 °C
= −55 °C
= 25 °C
= 100 °C
−1
−1
(1)
(2)
(3)
−10
−2
−10
PBSS306PX
−3
2
CEsat
I
B
(mA) = −1015
−10
© NXP B.V. 2009. All rights reserved.
−870
−580
−290
−4
(BISS) transistor
006aaa651
006aaa649
V
3
I
C
CE
−725
−435
−145
(mA)
(V)
−10
−5
4
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