PXTA92,115 NXP Semiconductors, PXTA92,115 Datasheet - Page 3

• Manufacturer Part Number: PXTA92,115
• Description: TRANS PNP 300V 100MA SOT89
• Manufacturer: NXP Semiconductors
• Series: -r

Specifications of PXTA92,115

• Transistor Type: PNP
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 300V
• Vce Saturation (max) @ Ib, Ic: 500mV @ 2mA, 20mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 25 @ 30mA, 10V
• Power - Max: 1.3W
• Frequency - Transition: 50MHz
• Mounting Type: Surface Mount
• Package / Case: SC-62, SOT-89, TO-243 (3 Leads + Tab)
• Current - Collector Cutoff (max): -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 933926800115; PXTA92 T/R; PXTA92 T/R

NXP Semiconductors
THERMAL CHARACTERISTICS
Note
1. Device mounted on a printed-circuit board, single-sided copper, tin-plated, mounting pad for collector 6 cm
CHARACTERISTICS
T
Note
1. Pulse test: t
2004 Dec 09
R
R
I
I
h
V
V
C
f
amb
CBO
EBO
T
SYMBOL
SYMBOL
FE
CEsat
BEsat
PNP high-voltage transistor
th(j-a)
th(j-s)
c
For other mounting conditions, see “Thermal considerations for SOT89 in the General Part of associated Handbook”.
= 25 °C unless otherwise specified.
thermal resistance from junction to ambient
thermal resistance from junction to soldering point
collector-base cut-off current
emitter-base cut-off current
DC current gain
collector-emitter saturation voltage
base-emitter saturation voltage
collector capacitance
transition frequency
p
≤ 300 µs; δ ≤ 0.02.
PARAMETER
PARAMETER
I
I
V
I
I
I
f = 1 MHz
I
f = 100 MHz
E
C
C
C
E
C
CE
I
I
I
= 0 A; V
= i
= 0 A; V
= −20 mA; I
= −20 mA; I
= −10 mA; V
C
C
C
= −10 V; note 1
= −1 mA
= −10 mA
= −30 mA
e
= 0 A; V
3
CONDITIONS
CB
BE
= −200 V
= −3 V
B
B
CB
CE
note 1
= −2 mA
= −2 mA
CONDITIONS
= −20 V;
= −20 V;
−
−
25
40
25
−
−
50
VALUE
MIN.
96
16
−250
−100
−
−
−
−500
−900
6
−
Product data sheet
MAX.
PXTA92
UNIT
K/W
K/W
nA
nA
mV
mV
pF
MHz
2
UNIT
.