TRANS NPN HV FAST 400V TO-220

BUL128D-B

Manufacturer Part NumberBUL128D-B
DescriptionTRANS NPN HV FAST 400V TO-220
ManufacturerSTMicroelectronics
BUL128D-B datasheet
 


Specifications of BUL128D-B

Transistor TypeNPNCurrent - Collector (ic) (max)4A
Voltage - Collector Emitter Breakdown (max)400VVce Saturation (max) @ Ib, Ic500mV @ 1A, 4A
Current - Collector Cutoff (max)250µADc Current Gain (hfe) (min) @ Ic, Vce12 @ 2A, 5V
Power - Max70WMounting TypeThrough Hole
Package / CaseTO-220-3 (Straight Leads)Transistor PolarityNPN
Collector Emitter Voltage V(br)ceo400VPower Dissipation Pd70W
Dc Collector Current4ADc Current Gain Hfe12
Transistor Case StyleTO-220No. Of Pins3
SvhcNo SVHCRohs CompliantYes
Lead Free Status / RoHS StatusLead free / RoHS CompliantFrequency - Transition-
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STMicroelectronics PREFERRED SALES
n
TYPE
NPN TRANSISTOR
n
HIGH VOLTAGE CAPABILITY
n
LOW SPREAD OF DYNAMIC PARAMETERS
n
MINIMUM LOT-TO-LOT SPREAD FOR
n
RELIABLE OPERATION
VERY HIGH SWITCHING SPEED
n
INTEGRATED ANTIPARALLEL
n
COLLECTOR- EMITTER DIODE
APPLICATIONS
ELECTRONIC BALLAST FOR
n
FLUORESCENT LIGHTING
FLYBACK AND FORWARD SINGLE
n
TRANSISTOR LOW POWER CONVERTERS
DESCRIPTION
The device is manufactured using high voltage
Multi
Epitaxial
Planar
technology
switching speeds and medium voltage capability.
It uses a Cellular Emitter structure with planar
edge termination to enhance switching speeds
while maintaining the wide RBSOA.
The device is designed for use in lighting
applications and low cost switch-mode power
supplies.
Table 1: Order Codes
Part Number
BUL128D-B
Table 2: Absolute Maximum Ratings
Symbol
V
Collector-Emitter Voltage (V
CES
V
Collector-Emitter Voltage (I
CEO
Emitter-Base Voltage
V
EBO
(I
= 0, I
= 2 A, t
< 10 µs, T
C
B
p
I
Collector Current
C
I
Collector Peak Current (t
CM
I
Base Current
B
I
Base Peak Current (t
BM
February 2005
HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR
Figure 1: Package
Figure 2: Internal Schematic Diagram
for
high
Marking
Package
BUL128D-B
TO-220
Parameter
= 0)
BE
= 0)
B
o
= 150
C)
J
< 5ms)
p
< 5ms)
p
BUL128D-B
3
2
1
TO-220
Packaging
Tube
Value
Unit
700
V
400
V
V
V
(BR)EBO
4
A
8
A
2
A
4
A
Rev. 2
1/8

BUL128D-B Summary of contents

  • Page 1

    ... Base Peak Current (t BM February 2005 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR Figure 1: Package Figure 2: Internal Schematic Diagram for high Marking Package BUL128D-B TO-220 Parameter = 150 C) J < 5ms) p < 5ms) p BUL128D TO-220 Packaging Tube Value Unit 700 V 400 (BR)EBO Rev. 2 1/8 ...

  • Page 2

    ... BUL128D-B Symbol P Total Dissipation at T tot T Storage Temperature stg T Max. Operating Junction Temperature J Table 3: Thermal Data R Thermal Resistance Junction-Case thj-case Thermal Resistance Junction-Ambient R thj-amb Table 4: Electrical Characteristics (T Symbol Parameter I Collector Cut-off Current CES ( Collector Cut-off Current CEO ( Emitter-Base (BR)EBO Breakdown Voltage ...

  • Page 3

    ... Figure 3: Safe Operating Area Figure 4: DC Current Gain Figure 5: Collector-Emitter Saturation Voltage Figure 6: Derating Current Figure 7: DC Current Gain Figure 8: Base-Emitter Saturation Voltage BUL128D-B 3/8 ...

  • Page 4

    ... BUL128D-B Figure 9: Inductive Load Fall Time Figure 10: Resistive Load Fall Time Figure 11: Reverse Biased Operating Area 4/8 Figure 12: Inductive Load Stoarage Time Figure 13: Resistive Load Stoarage Time ...

  • Page 5

    ... Figure 14: Inductive Load Switching Test Circuit 1) Fast electronic switch 2) Non-inductive Resistor 3) Fast recovery rectifier Table 15: Restistive Load Switching Test Circuit 1) Fast electronic switch 2) Non-inductive Resistor BUL128D-B 5/8 ...

  • Page 6

    ... BUL128D-B DIM. MIN. A 4.40 b 0.61 b1 1.15 c 0.49 D 15. 2.40 e1 4.95 F 1.23 H1 6. 3.50 L20 L30 øP 3.75 Q 2.65 6/8 TO-220 MECHANICAL DATA mm. TYP MAX. 4.60 0.88 1.70 0.70 15.75 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 16.40 28.90 3.85 2.95 inch MIN ...

  • Page 7

    ... Table 5: Version Release Date 01-Oct-2002 1 15-Feb-2005 1 Change Designator First Release. Added table 1 on page 1. BUL128D-B 7/8 ...

  • Page 8

    ... BUL128D-B Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice ...