BUF420M STMicroelectronics, BUF420M Datasheet

TRANSISTOR NPN SW 450V 30A TO3

BUF420M

Manufacturer Part Number
BUF420M
Description
TRANSISTOR NPN SW 450V 30A TO3
Manufacturer
STMicroelectronics
Datasheet

Specifications of BUF420M

Transistor Type
NPN
Current - Collector (ic) (max)
30A
Voltage - Collector Emitter Breakdown (max)
450V
Vce Saturation (max) @ Ib, Ic
500mV @ 4A, 20A
Power - Max
275W
Mounting Type
Chassis Mount
Package / Case
TO-204, TO-3
Transistor Polarity
NPN
Mounting Style
Through Hole
Collector- Emitter Voltage Vceo Max
450 V
Emitter- Base Voltage Vebo
7 V
Maximum Dc Collector Current
30 A
Power Dissipation
275 W
Maximum Operating Temperature
+ 200 C
Continuous Collector Current
30 A
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Frequency - Transition
-
Dc Current Gain (hfe) (min) @ Ic, Vce
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
497-4086-5
APPLICATIONS:
DESCRIPTION
The BUF420M is manufactured using High
Voltage Multi Epitaxial Planar technology for high
switching speeds and high voltage capacity. It
uses a Cellular Emitter structure with planar edge
termination to enhance switching speeds while
maintaining a wide RBSOA.
The BUF series is designed for use in
high-frequency power supplies and motor control
applications.
ABSOLUTE MAXIMUM RATINGS
March 2002
Symbol
STMicroelectronics PREFERRED
SALESTYPE
HIGH VOLTAGE CAPABILITY
VERY HIGH SWITCHING SPEED
MINIMUM LOT-TO-LOT SPREAD FOR
RELIABLE OPERATION
LOW BASE-DRIVE REQUIREMENTS
SWITCH MODE POWER SUPPLIES
MOTOR CONTROL
V
V
V
T
P
I
I
CEO
EBO
CEV
I
CM
I
BM
T
stg
C
B
tot
j
Collector-Emitter Voltage (V
Collector-Emitter Voltage (I
Emitter-Base Voltage (I
Collector Current
Collector Peak Current (t
Base Current
Base Peak Current (t
Total Dissipation at T
Storage Temperature
Max. Operating Junction Temperature
®
Parameter
p
c
< 5 ms)
= 25
C
p
= 0)
< 5 ms)
B
BE
o
C
= 0)
HIGH VOLTAGE FAST-SWITCHING
= -1.5V)
NPN POWER TRANSISTOR
INTERNAL SCHEMATIC DIAGRAM
-65 to 200
(version "R")
1
Value
850
450
275
200
30
60
7
6
9
TO-3
2
BUF420M
Unit
o
o
W
V
V
V
A
A
A
A
C
C
1/8

Related parts for BUF420M

BUF420M Summary of contents

Page 1

... LOW BASE-DRIVE REQUIREMENTS APPLICATIONS: SWITCH MODE POWER SUPPLIES MOTOR CONTROL DESCRIPTION The BUF420M is manufactured using High Voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capacity. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining a wide RBSOA ...

Page 2

... BUF420M THERMAL DATA R Thermal Resistance Junction-Case thj-case ELECTRICAL CHARACTERISTICS (T Symbol Parameter I Collector Cut-off CER Current ( Collector Cut-off CEV Current (V = -1.5V Emitter Cut-off Current EBO ( Collector-Emitter CEO(sus) Sustaining Voltage ( Emitter Base Voltage EBO ( Collector-Emitter CE(sat) Saturation Voltage V Base-Emitter BE(sat) Saturation Voltage di /dt ...

Page 3

... V Maximum Collector CEW Emitter Voltage without Snubber Test Conditions 0. 400 clamp 0. =100 0. 0. =125 =0 400 clamp 0. 0 400 clamp 0. =125 CWoff 0 0. =125 C C BUF420M Min. Typ. Max. 3 0.15 o 0.25 C 500 2.2 0.06 0.12 3.5 0.12 o 0.3 C 400 Unit 3/8 ...

Page 4

... BUF420M DC Current Gain Collector Emitter Saturation Voltage Forward Biased Safe Operating Area 4/8 DC Current Gain Base Emitter Saturation Voltage Reverse Biased Safe Operating Area ...

Page 5

... Storage Time Versus Pulse Time. Figure 1: Inductive Load Switching Test Circuit. 1) Fast electronic switch 2) Non-inductive Resistor 3) Fast recovery rectifier BUF420M 5/8 ...

Page 6

... BUF420M Turn-on Switching Test Waveforms. Turn-off Switching Test Waveforms (inductive load). 6/8 ...

Page 7

... TO-3 (version R) MECHANICAL DATA DIM. MIN 0. 3. TYP. MAX. 11.7 1.10 1.70 8.7 20.0 10.9 16.9 26.2 4.09 39.50 30. BUF420M inch MIN. TYP. 0.460 0.037 0.429 0.665 0.152 1.185 P003N MAX. 0.043 0.066 0.342 0.787 1.031 0.161 1.555 7/8 ...

Page 8

... BUF420M Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice ...

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