BUF420M STMicroelectronics, BUF420M Datasheet - Page 3

• Manufacturer Part Number: BUF420M
• Description: TRANSISTOR NPN SW 450V 30A TO3
• Manufacturer: STMicroelectronics

Specifications of BUF420M

• Transistor Type: NPN
• Current - Collector (ic) (max): 30A
• Voltage - Collector Emitter Breakdown (max): 450V
• Vce Saturation (max) @ Ib, Ic: 500mV @ 4A, 20A
• Power - Max: 275W
• Mounting Type: Chassis Mount
• Package / Case: TO-204, TO-3
• Transistor Polarity: NPN
• Mounting Style: Through Hole
• Collector- Emitter Voltage Vceo Max: 450 V
• Emitter- Base Voltage Vebo: 7 V
• Maximum Dc Collector Current: 30 A
• Power Dissipation: 275 W
• Maximum Operating Temperature: + 200 C
• Continuous Collector Current: 30 A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Frequency - Transition: -
• Dc Current Gain (hfe) (min) @ Ic, Vce: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 497-4086-5

ELECTRICAL CHARACTERISTICS (continued)
Symbol
V
V
CEW
CEW
t
t
t
t
t
t
t
t
t
s
c
s
c
s
c
f
f
f
INDUCTIVE LOAD
Storage Time
Fall Time
Cross Over Time
Maximum Collector
Emitter Voltage
without Snubber
INDUCTIVE LOAD
Storage Time
Fall Time
Cross Over Time
INDUCTIVE LOAD
Storage Time
Fall Time
Cross Over Time
Maximum Collector
Emitter Voltage
without Snubber
Parameter
I
V
V
L = 0.25 mH
I
V
I
T
I
V
V
L = 0.12 mH
I
V
V
L = 0.12 mH
I
V
L = 0.12 mH
T
C
C
B1
C
C
CWoff
C
C
BB
clamp
BB
BB
clamp
BB
clamp
BB
= 10 A
= 10 A
= 20 A
= 20 A
=125
=125
= 1 A
= 0
= 0
= -5 V
= - 5 V
= - 5 V
= 30 A
= 400 V
= 400 V
= 400 V
o
o
C
C
Test Conditions
R
R
V
I
T
V
L = 0.25 mH
B1
R
I
R
I
T
R
I
V
V
V
C
B1
B1
B1
BB
BB
CC
CC
C
CC
CC
BB
BB
CC
BB
=100
= 1 A
=125
= 4 A
= 4 A
= 6 A
= 0.15
= 0.15
= 50 V
= 50 V
= 50 V
=0.6
= 50 V
= 0.6
= 0.6
= 50 V
o
o
C
C
Min.
500
400
Typ.
0.06
0.12
2.2
Max.
0.15
0.25
0.12
3.5
0.3
3
BUF420M
Unit
V
V
s
s
s
s
s
s
s
s
s
3/8