BCP 49 E6327 Infineon Technologies, BCP 49 E6327 Datasheet - Page 2

• Manufacturer Part Number: BCP 49 E6327
• Description: TRANSISTOR DARL NPN AF SOT-223
• Manufacturer: Infineon Technologies

Specifications of BCP 49 E6327

• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Transistor Type: NPN - Darlington
• Current - Collector (ic) (max): 500mA
• Voltage - Collector Emitter Breakdown (max): 60V
• Vce Saturation (max) @ Ib, Ic: 1V @ 100µA, 100mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 10000 @ 100mA, 5V
• Power - Max: 1.5W
• Frequency - Transition: 200MHz
• Mounting Type: Surface Mount
• Configuration: Single Dual Collector
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 60 V
• Emitter- Base Voltage Vebo: 10 V
• Collector- Base Voltage Vcbo: 80 V
• Maximum Dc Collector Current: 0.5 A
• Maximum Collector Cut-off Current: 0.1 uA
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 2000
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: BCP49E6327XT; SP000010685

Electrical Characteristics at T
Parameter
DC Characteristics
Collector-emitter breakdown voltage
I
Collector-base breakdown voltage
I
Emitter-base breakdown voltage
I
Collector cutoff current
V
Collector cutoff current
V
Emitter cutoff current
V
DC current gain 1)
I
DC current gain 1)
I
DC current gain 1)
I
DC current gain 1)
I
1) Pulse test: t
C
C
E
C
C
C
C
CB
CB
EB
= 10 µA, I
= 1 mA, I
= 100 µA, I
= 100 µA, V
= 10 mA, V
= 100 mA, V
= 500 mA, V
= 5 V, I
= 60 V, I
= 60 V, I
B
C
C
E
E
= 0
E
= 0
CE
300 s, D = 2%
= 0
CE
= 0
= 0 , T
CE
CE
= 0
= 5 V
= 1 V
= 5 V
= 5 V
A
= 150 °C
A
= 25°C, unless otherwise specified.
2
Symbol
V
V
V
I
I
I
h
h
h
h
CBO
CBO
EBO
FE
FE
FE
FE
(BR)CEO
(BR)CBO
(BR)EBO
10000
2000
4000
2000
min.
60
80
10
-
-
-
Values
typ.
-
-
-
-
-
-
-
-
-
-
max.
100
100
10
2007-04-27
-
-
-
-
-
-
-
BCP49
Unit
V
nA
µA
nA
-