BCP 49 E6327 Infineon Technologies, BCP 49 E6327 Datasheet - Page 5

• Manufacturer Part Number: BCP 49 E6327
• Description: TRANSISTOR DARL NPN AF SOT-223
• Manufacturer: Infineon Technologies

Specifications of BCP 49 E6327

• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Transistor Type: NPN - Darlington
• Current - Collector (ic) (max): 500mA
• Voltage - Collector Emitter Breakdown (max): 60V
• Vce Saturation (max) @ Ib, Ic: 1V @ 100µA, 100mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 10000 @ 100mA, 5V
• Power - Max: 1.5W
• Frequency - Transition: 200MHz
• Mounting Type: Surface Mount
• Configuration: Single Dual Collector
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 60 V
• Emitter- Base Voltage Vebo: 10 V
• Collector- Base Voltage Vcbo: 80 V
• Maximum Dc Collector Current: 0.5 A
• Maximum Collector Cut-off Current: 0.1 uA
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 2000
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: BCP49E6327XT; SP000010685

DC current gain h
V
Collector-base capacitance C
Emitter-base capacitance C
h
FE
CE
10
10
10
10
pF
160
120
100
= 5V
5
5
5
80
60
40
20
10
6
5
4
3
0
0
BCP 29/49
-1
4
10
CCB
8
CEB
0
125
-55 ˚C
25 ˚C
12
FE
˚C
= f (I
16
10
1
C
20
)
eb
24
10
cb
= (V
2
= (V
28 V
C
EHP00255
mA
VCB0(VEB0
EB
CB
)
10
34
)
3
5
Base-emitter saturation voltage
I
Collector-emitter saturation voltage
I
C
C
C
C
= f (V
= f (V
mA
mA
10
10
10
10
10
10
10
10
5
5
5
5
3
2
1
0
3
2
1
0
0
0
BCP 29/49
BCP 29/49
BEsat
CEsat
), h
), h
FE
FE
1.0
0.5
= 1000
= 1000
2.0
1.0
150
-50 ˚C
25 ˚C
2007-04-27
˚C
150
V
-50 ˚C
V
25 ˚C
BEsat
CEsat
BCP49
V
EHP00258
V
EHP00256
˚C
3.0
1.5