BCP 49 E6327 Infineon Technologies, BCP 49 E6327 Datasheet - Page 5
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BCP 49 E6327
Manufacturer Part Number
BCP 49 E6327
Description
TRANSISTOR DARL NPN AF SOT-223
Manufacturer
Infineon Technologies
Datasheet
1.BCP_49_E6327.pdf
(7 pages)
Specifications of BCP 49 E6327
Package / Case
SOT-223 (3 leads + Tab), SC-73, TO-261
Transistor Type
NPN - Darlington
Current - Collector (ic) (max)
500mA
Voltage - Collector Emitter Breakdown (max)
60V
Vce Saturation (max) @ Ib, Ic
1V @ 100µA, 100mA
Dc Current Gain (hfe) (min) @ Ic, Vce
10000 @ 100mA, 5V
Power - Max
1.5W
Frequency - Transition
200MHz
Mounting Type
Surface Mount
Configuration
Single Dual Collector
Transistor Polarity
NPN
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
60 V
Emitter- Base Voltage Vebo
10 V
Collector- Base Voltage Vcbo
80 V
Maximum Dc Collector Current
0.5 A
Maximum Collector Cut-off Current
0.1 uA
Maximum Operating Temperature
+ 150 C
Dc Collector/base Gain Hfe Min
2000
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
BCP49E6327XT
SP000010685
SP000010685
DC current gain h
V
Collector-base capacitance C
Emitter-base capacitance C
h
FE
CE
10
10
10
10
pF
160
120
100
= 5V
5
5
5
80
60
40
20
10
6
5
4
3
0
0
BCP 29/49
-1
4
10
CCB
8
CEB
0
125
-55 ˚C
25 ˚C
12
FE
˚C
= f (I
16
10
1
C
20
)
eb
24
10
cb
= (V
2
= (V
28 V
C
EHP00255
mA
VCB0(VEB0
EB
CB
)
10
34
)
3
5
Base-emitter saturation voltage
I
Collector-emitter saturation voltage
I
C
C
C
C
= f (V
= f (V
mA
mA
10
10
10
10
10
10
10
10
5
5
5
5
3
2
1
0
3
2
1
0
0
0
BCP 29/49
BCP 29/49
BEsat
CEsat
), h
), h
FE
FE
1.0
0.5
= 1000
= 1000
2.0
1.0
150
-50 ˚C
25 ˚C
2007-04-27
˚C
150
V
-50 ˚C
V
25 ˚C
BEsat
CEsat
BCP49
V
EHP00258
V
EHP00256
˚C
3.0
1.5