2N5401,116 NXP Semiconductors, 2N5401,116 Datasheet - Page 2

• Manufacturer Part Number: 2N5401,116
• Description: TRANSISTOR PNP 150V 300MA TO-92
• Manufacturer: NXP Semiconductors

Specifications of 2N5401,116

• Transistor Type: PNP
• Current - Collector (ic) (max): 300mA
• Voltage - Collector Emitter Breakdown (max): 150V
• Vce Saturation (max) @ Ib, Ic: 500mV @ 5mA, 50mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 60 @ 10mA, 5V
• Power - Max: 630mW
• Frequency - Transition: 300MHz
• Mounting Type: Through Hole
• Package / Case: TO-92-3 (Standard Body), TO-226
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Other names: 2N5401 T/R; 2N5401 T/R; 933275440116

Philips Semiconductors
FEATURES
APPLICATIONS
DESCRIPTION
PNP high-voltage transistor in a TO-92; SOT54 plastic
package. NPN complement: 2N5551.
ORDERING INFORMATION
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
2004 Oct 28
2N5401
V
V
V
I
I
I
P
T
T
T
R
SYMBOL
SYMBOL
C
CM
BM
TYPE NUMBER
stg
j
amb
Low current (max. 300 mA)
High voltage (max. 150 V).
General purpose switching and amplification
Telephony applications.
CBO
CEO
EBO
tot
th(j-a)
PNP high-voltage transistor
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
ambient temperature
thermal resistance from junction to ambient
SC-43A
PARAMETER
NAME
PARAMETER
plastic single-ended leaded (through hole) package; 3 leads
open emitter
open base
open collector
T
amb
note 1
2
25 C
PINNING
CONDITIONS
handbook, halfpage
DESCRIPTION
PACKAGE
CONDITIONS
Fig.1
PIN
1
2
3
Simplified outline (TO-92; SOT54)
and symbol.
1
2
collector
base
emitter
3
65
65
MIN.
DESCRIPTION
VALUE
200
Product specification
630
+150
150
+150
MAM280
160
150
5
300
600
100
MAX.
2N5401
2
VERSION
SOT54
UNIT
K/W
V
V
V
mA
mA
mA
mW
C
C
C
UNIT
1
3