2N5401,116 NXP Semiconductors, 2N5401,116 Datasheet - Page 3

• Manufacturer Part Number: 2N5401,116
• Description: TRANSISTOR PNP 150V 300MA TO-92
• Manufacturer: NXP Semiconductors

Specifications of 2N5401,116

• Transistor Type: PNP
• Current - Collector (ic) (max): 300mA
• Voltage - Collector Emitter Breakdown (max): 150V
• Vce Saturation (max) @ Ib, Ic: 500mV @ 5mA, 50mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 60 @ 10mA, 5V
• Power - Max: 630mW
• Frequency - Transition: 300MHz
• Mounting Type: Through Hole
• Package / Case: TO-92-3 (Standard Body), TO-226
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Other names: 2N5401 T/R; 2N5401 T/R; 933275440116

Philips Semiconductors
CHARACTERISTICS
T
2004 Oct 28
handbook, full pagewidth
I
I
h
V
C
f
F
SYMBOL
amb
CBO
EBO
T
FE
CEsat
c
PNP high-voltage transistor
= 25 C unless otherwise specified.
h FE
200
150
100
50
0
10
1
collector-base cut-off current
emitter-base cut-off current
DC current gain
collector-emitter saturation voltage I
collector capacitance
transition frequency
noise figure
PARAMETER
1
Fig.2 DC current gain; typical values.
V
V
V
V
I
V
V
V
f = 10 Hz to 15.7 kHz
C
C
CB
CB
EB
CE
CB
CE
CE
I
I
I
= 10 mA; I
= 50 mA; I
C
C
C
= 120 V; I
= 120 V; I
= 4 V; I
= 5 V; see Fig.2
= 10 V; I
= 10 V; I
= 5 V; I
= 1 mA
= 10 mA
= 50 mA
3
10
CONDITIONS
C
C
B
B
E
C
= 0 A
= 200 A; R
E
E
= 1 mA
= 5 mA
= i
= 10 mA; f = 100 MHz 100
= 0 A
= 0 A; T
e
= 0 A; f = 1 MHz
j
= 100 C
S
= 2 k ;
10
V CE = 5 V
2
50
60
50
MIN.
I C mA
Product specification
240
6
300
8
MAX.
50
50
50
200
500
2N5401
MGD813
10
nA
nA
mV
mV
pF
MHz
pF
3
UNIT
A