PDTC115ET,215 NXP Semiconductors, PDTC115ET,215 Datasheet - Page 12

• Manufacturer Part Number: PDTC115ET,215
• Description: TRANS NPN 50V 20MA SOT23
• Manufacturer: NXP Semiconductors

Specifications of PDTC115ET,215

• Package / Case: TO-236-3, SC-59, SOT-23-3
• Transistor Type: NPN - Pre-Biased
• Current - Collector (ic) (max): 20mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 100K
• Resistor - Emitter Base (r2) (ohms): 100K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 80 @ 5mA, 5V
• Vce Saturation (max) @ Ib, Ic: 150mV @ 250µA, 5mA
• Current - Collector Cutoff (max): 1µA
• Power - Max: 250mW
• Mounting Type: Surface Mount
• Configuration: Single
• Transistor Polarity: NPN
• Typical Input Resistor: 100 KOhm
• Typical Resistor Ratio: 1
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 50 V
• Peak Dc Collector Current: 20 mA
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934057527215; PDTC115ET T/R; PDTC115ET T/R

NXP Semiconductors
2004 Aug 06
NPN resistor-equipped transistors;
R1 = 100 kΩ, R2 = 100 kΩ
Plastic surface-mounted package; 3 leads
DIMENSIONS (mm are the original dimensions)
UNIT
mm
VERSION
OUTLINE
SOT490
0.8
0.6
A
0.33
0.23
b
p
1
0.2
0.1
c
IEC
e 1
1.7
1.5
D
D
e
b p
0.95
0.75
E
3
JEDEC
0
1.0
e
REFERENCES
2
0.5
e
1
w
B
M
1.7
1.5
B
H
E
JEITA
SC-89
scale
12
1
0.5
0.3
L
p
0.1
v
A
0.1
w
2 mm
H E
E
detail X
PROJECTION
EUROPEAN
PDTC115E series
L p
A
c
X
Product data sheet
v
ISSUE DATE
M
05-07-28
06-03-16
A
SOT490