PIC18F65K90T-I/PT Microchip Technology, PIC18F65K90T-I/PT Datasheet - Page 521

• Manufacturer Part Number: PIC18F65K90T-I/PT
• Description: 32kB Flash, 2kB RAM, 1kB EE, NanoWatt XLP, LCD 64 TQFP 10x10x1mm T/R
• Manufacturer: Microchip Technology
• Series: PIC® XLP™ 18Fr

Specifications of PIC18F65K90T-I/PT

• Processor Series: PIC18F
• Core: PIC
• Data Bus Width: 8 bit
• Program Memory Type: Flash
• Program Memory Size: 32 KB
• Data Ram Size: 2 KB
• Interface Type: I2C, SPI
• Maximum Clock Frequency: 64 MHz
• Number Of Timers: 8
• Operating Supply Voltage: 1.8 V to 5.5 V
• Maximum Operating Temperature: + 125 C
• 3rd Party Development Tools: 52715-96, 52716-328, 52717-734, 52712-325, EWPIC18
• Minimum Operating Temperature: - 40 C
• On-chip Adc: 12 bit, 16 Channel
• Core Processor: PIC
• Core Size: 8-Bit
• Speed: 64MHz
• Connectivity: I²C, LIN, SPI, UART/USART
• Peripherals: Brown-out Detect/Reset, LCD, POR, PWM, WDT
• Number Of I /o: 53
• Eeprom Size: 1K x 8
• Ram Size: 2K x 8
• Voltage - Supply (vcc/vdd): 1.8 V ~ 5.5 V
• Data Converters: A/D 16x12b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 64-TQFP
• Lead Free Status / Rohs Status: Details

TABLE 31-1:
 2009-2011 Microchip Technology Inc.
DC CHARACTERISTICS
D110
D113
D120
D121
D122
D123
D124
D130
D131
D132B V
D133A T
D134
D135
D140
Note 1:
Param
No.
2:
3:
† Data in “Typ” column is at 3.3V, 25°C unless otherwise stated. These parameters are for design guidance
V
I
E
V
T
T
T
E
V
T
I
T
DDP
DDP
Sym
RETD
REF
IW
RETD
WE
PP
D
DRW
DEW
P
PR
PEW
only and are not tested.
These specifications are for programming the on-chip program memory through the use of table write
instructions.
Refer to
endurance.
The MPLAB
placed between the ICD 2 and target system when programming or debugging with the ICD 2.
Internal Program Memory
Programming Specifications
Voltage on MCLR/V
Supply Current during
Programming
Data EEPROM Memory
Byte Endurance
V
Erase/Write Cycle Time
Characteristic Retention
Number of Total Erase/Write
Cycles before Refresh
Program Flash Memory
Cell Endurance
V
Voltage for Self-Timed Erase or
Write Operations
V
Self-Timed Write Cycle Time
Characteristic Retention
Supply Current during
Programming
Writes per Erase Cycle
MEMORY PROGRAMMING REQUIREMENTS
DD
DD
DD
Section 8.8 “Using the Data EEPROM”
for Read/Write
for Read
®
ICD 2 does not support variable V
Characteristic
PP
/RE5 pin
(2)
(1)
Standard Operating Conditions (unless otherwise stated)
Operating temperature -40°C  T
V
DD
100K
10K
Min
1.8
1.8
1M
1.8
1.8
1.8
40
40
—
—
—
—
—
+ 1.5
PP
PIC18F87K90 FAMILY
for a more detailed discussion on data EEPROM
output. Circuitry to limit the ICD 2 V
Typ†
10M
—
—
—
—
—
—
—
—
—
—
—
—
—
4
2
Max
5.5
3.6
5.5
3.6
5.5
10
—
—
—
—
10
—
—
—
-40°C  T
9
1
Units
Year Provided no other
Year Provided no other
E/W -40  C to +125  C
E/W -40°C to +125°C
E/W -40  C to +125  C
mA
mA
ms
ms
V
V
V
V
V
V
A
A
 +125°C for extended
 +85°C for industrial
(Note 3)
(Note 2)
Using EECON to read/write
ENVREG tied to V
Using EECON to read/write
ENVREG tied to V
specifications are violated
ENVREG tied to V
ENVREG tied to V
ENVREG tied to V
specifications are violated
For each physical address
Conditions
PP
DS39957D-page 521
voltage must be
DD
SS
DD
SS
DD