PIC18LF13K22-E/SO Microchip Technology, PIC18LF13K22-E/SO Datasheet - Page 24

• Manufacturer Part Number: PIC18LF13K22-E/SO
• Description: 8KB Flash, 256bytes RAM, 256bytes EEPROM, 16MIPS, NanoWatt XLP 20 SOIC .300in TU
• Manufacturer: Microchip Technology
• Series: PIC® XLP™ 18Fr

Specifications of PIC18LF13K22-E/SO

• Core Processor: PIC
• Core Size: 8-Bit
• Speed: 48MHz
• Connectivity: I²C, LIN, SPI, UART/USART
• Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
• Number Of I /o: 17
• Program Memory Size: 8KB (4K x 16)
• Program Memory Type: FLASH
• Eeprom Size: 256 x 8
• Ram Size: 256 x 8
• Voltage - Supply (vcc/vdd): 1.8 V ~ 3.6 V
• Data Converters: A/D 12x10b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 125°C
• Package / Case: 20-SOIC (7.5mm Width)
• Processor Series: PIC18LF
• Core: PIC
• Data Bus Width: 8 bit
• Data Ram Size: 256 B
• Interface Type: EUSART, I2C, SPI
• Maximum Clock Frequency: 32 KHz
• Number Of Programmable I/os: 18
• Number Of Timers: 4
• Operating Supply Voltage: 1.8 V to 3.6 V
• Maximum Operating Temperature: + 125 C
• Mounting Style: SMD/SMT
• 3rd Party Development Tools: 52715-96, 52716-328, 52717-734, 52712-325, EWPIC18
• Development Tools By Supplier: PG164130, DV164035, DV244005, DV164005
• Minimum Operating Temperature: - 40 C
• On-chip Adc: 10 bit, 12 Channel
• A/d Bit Size: 10 bit
• A/d Channels Available: 12
• Height: 2.05 mm
• Length: 12.8 mm
• Supply Voltage (max): 3.6 V
• Supply Voltage (min): 1.8 V, 2.7 V
• Width: 7.5 mm
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

PIC18F1XK22/LF1XK22
5.3
A Configuration address may be read and output on
PGD via the 4-bit command, ‘1001’. Configuration data
is read and written in a byte-wise fashion, so it is not
necessary to merge two bytes into a word prior to a
compare. The result may then be immediately
compared to the appropriate configuration data in the
programmer’s memory for verification. Refer to
Section 5.1 “Read Program Flash, ID Locations and
Configuration Bits” for implementation details of
reading Configuration data.
5.4
Data EEPROM is accessed one byte at a time via an
Address Pointer (register EEADR) and a data latch
(EEDATA). Data EEPROM is read by loading EEADR
with the desired memory location and initiating a
memory
EECON1 register. The data will be loaded into
EEDATA, where it may be serially output on PGD via
the 4-bit command, ‘0010’ (Shift Out Data Holding
register). A delay of P6 must be introduced after the
falling edge of the 8th PGC of the operand to allow
PGD to transition from an input to an output. During this
time, PGC must be held low (see Figure 5-4).
The command sequence to read a single byte of data
is shown in Table 5-2.
TABLE 5-2:
DS41357B-page 24
Step 1: Direct access to data EEPROM.
Step 2: Set the data EEPROM Address Pointer.
Step 3: Initiate a memory read.
Step 4: Load data into the Serial Data Holding register.
Note 1:
Command
0000
0000
0000
0000
0000
0000
0000
0000
0010
4-bit
Verify Configuration Bits
Read Data EEPROM Memory
read
The <LSB> is undefined. The <MSB> is the data.
by
READ DATA EEPROM MEMORY
appropriately
<MSB><LSB>
Data Payload
0E <Addr>
9E A6
9C A6
6E A9
80 A6
50 A8
6E F5
00 00
configuring
BCF EECON1, EEPGD
BCF EECON1, CFGS
MOVLW <Addr>
MOVWF EEADR
BSF EECON1, RD
MOVF EEDATA, W, 0
MOVWF TABLAT
NOP
Shift Out Data
Advance Information
the
(1)
FIGURE 5-3:
Core Instruction
No
Move to TABLAT
READ DATA EEPROM
FLOW
Shift Out Data
© 2009 Microchip Technology Inc.
Address
done?
Read
Byte
Start
Done
Set
Yes