PIC18LF13K22-E/SO Microchip Technology, PIC18LF13K22-E/SO Datasheet - Page 33

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PIC18LF13K22-E/SO

Manufacturer Part Number
PIC18LF13K22-E/SO
Description
8KB Flash, 256bytes RAM, 256bytes EEPROM, 16MIPS, NanoWatt XLP 20 SOIC .300in TU
Manufacturer
Microchip Technology
Series
PIC® XLP™ 18Fr

Specifications of PIC18LF13K22-E/SO

Core Processor
PIC
Core Size
8-Bit
Speed
48MHz
Connectivity
I²C, LIN, SPI, UART/USART
Peripherals
Brown-out Detect/Reset, POR, PWM, WDT
Number Of I /o
17
Program Memory Size
8KB (4K x 16)
Program Memory Type
FLASH
Eeprom Size
256 x 8
Ram Size
256 x 8
Voltage - Supply (vcc/vdd)
1.8 V ~ 3.6 V
Data Converters
A/D 12x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 125°C
Package / Case
20-SOIC (7.5mm Width)
Processor Series
PIC18LF
Core
PIC
Data Bus Width
8 bit
Data Ram Size
256 B
Interface Type
EUSART, I2C, SPI
Maximum Clock Frequency
32 KHz
Number Of Programmable I/os
18
Number Of Timers
4
Operating Supply Voltage
1.8 V to 3.6 V
Maximum Operating Temperature
+ 125 C
Mounting Style
SMD/SMT
3rd Party Development Tools
52715-96, 52716-328, 52717-734, 52712-325, EWPIC18
Development Tools By Supplier
PG164130, DV164035, DV244005, DV164005
Minimum Operating Temperature
- 40 C
On-chip Adc
10 bit, 12 Channel
A/d Bit Size
10 bit
A/d Channels Available
12
Height
2.05 mm
Length
12.8 mm
Supply Voltage (max)
3.6 V
Supply Voltage (min)
1.8 V, 2.7 V
Width
7.5 mm
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
8.0
© 2009 Microchip Technology Inc.
Standard Operating Conditions
Operating Temperature: 25°C is recommended
D110
D110
A
D111
D112
D113
D031
D041
D080
D090
D012
P1
P2
P2A
P2B
P3
P4
P5
P5A
P6
P9
P9A
P10
P11
P11A
Note 1:
m No.
Para
V
V
V
I
I
V
V
V
V
C
T
T
T
T
T
T
T
T
T
T
T
A
T
T
T
PP
DDP
AC/DC CHARACTERISTICS TIMING REQUIREMENTS FOR PROGRAM/
VERIFY TEST MODE
Sym.
R
PGC
PGCL
PGCH
SET
HLD
DLY
DLY
DLY
DLY
DLY
DLY
DLY
DRWT
IHH
IHL
DD
IL
IH
OL
OH
IO
Do not allow excess time when transitioning MCLR between V
executions to occur. The maximum transition time is:
1 T
only) + 1.5 μs (for EC mode only) where T
and T
data sheet for the particular device.
1
1
1
2
5
5
6
7
1
A
CY
High-Voltage Programming Voltage on
MCLR/V
Low-Voltage Programming Voltage on
MCLR/V
PIC18F1XK22 (includes Bulk Erase)
PIC18LF1XK22 (includes Bulk Erase)
Programming Current on MCLR/V
Supply Current During Programming
Input Low Voltage
Input High Voltage
Output Low Voltage
Output High Voltage
Capacitive Loading on I/O pin (PGD)
MCLR/V
Program/Verify mode
Serial Clock (PGC) Period
Serial Clock (PGC) Low Time
Serial Clock (PGC) High Time
Input Data Setup Time to Serial Clock ↓
Input Data Hold Time from PGC ↓
Delay between 4-bit Command and Command
Operand
Delay between 4-bit Command Operand and next
4-bit Command
Delay between Last PGC ↓ of Command Byte to
First PGC ↑ of Read of Data Word
PGC High Time (minimum programming time)
PGC High Time
PGC Low Time after Programming
(high-voltage discharge time)
Delay to allow Self-Timed Data Write or
Bulk Erase to occur
Data Write Polling Time
OSC
+ T
PWRT
is the oscillator period. For specific values, refer to the Electrical Characteristics section of the device
PP
PP
PP
(if enabled) + 1024 T
/RA3
/RA3
/RA3 Rise Time to enter
Characteristic
Advance Information
OSC
PP
(for LP, HS, HS/PLL and XT modes only) + 2 ms (for HS/PLL mode
/RA3
CY
is the instruction cycle time, T
PIC18F1XK22/LF1XK22
V
0.8 V
DD
Min.
1.80
2.70
2.70
V
100
400
400
100
40
40
15
15
40
40
20
8
1
1
5
5
4
SS
– 0.7
IL
DD
and V
0.2 V
IHH
Max.
5.50
3.60
V
V
0.6
1.0
50
9
5
5
DD
DD
; this can cause spurious program
DD
PWRT
Units
mA
mA
ms
ms
ms
ms
pF
μs
ns
μs
ns
ns
ns
ns
ns
ns
ns
ns
ns
μs
is the Power-up Timer period
V
V
V
V
V
V
V
V
I
I
To meet AC specifica-
tions
(Note 1)
V
V
V
V
V
V
Externally Timed
Configuration Word
programming time
OL
OH
DD
DD
DD
DD
DD
DD
= 3.0 mA @ 2.7V
= -2.0 mA @ 2.7V
= 3.6V
= 1.8V
= 3.6V
= 1.8V
= 3.6V
= 1.8V
Conditions
DS41357B-page 33

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