MT48LC2M32B2P-6:G Micron Technology Inc, MT48LC2M32B2P-6:G Datasheet - Page 46

IC, SDRAM, 64MBIT, 166MHZ, TSOP-86

MT48LC2M32B2P-6:G

Manufacturer Part Number
MT48LC2M32B2P-6:G
Description
IC, SDRAM, 64MBIT, 166MHZ, TSOP-86
Manufacturer
Micron Technology Inc
Type
SDRAMr
Series
-r
Datasheets

Specifications of MT48LC2M32B2P-6:G

Organization
2Mx32
Density
64Mb
Address Bus
13b
Access Time (max)
17/7.5/5.5ns
Maximum Clock Rate
166MHz
Operating Supply Voltage (typ)
3.3V
Package Type
TSOP-II
Operating Temp Range
0C to 70C
Operating Supply Voltage (max)
3.6V
Operating Supply Voltage (min)
3V
Supply Current
180mA
Pin Count
86
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Memory Type
DRAM - Sychronous
Access Time
5.5ns
Page Size
64Mbit
Memory Case Style
TSOP
No. Of Pins
86
Operating Temperature Range
0°C To +70°C
Frequency
166MHz
Supply Voltage
3.3V
Format - Memory
RAM
Memory Size
64M (2Mx32)
Speed
167MHz
Interface
Parallel
Voltage - Supply
3 V ~ 3.6 V
Operating Temperature
0°C ~ 70°C
Package / Case
86-TFSOP (0.400", 10.16mm Width)
Filter Terminals
SMD
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Compliant
Lead Free Status / RoHS Status
Compliant, Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MT48LC2M32B2P-6:G
Quantity:
106
Part Number:
MT48LC2M32B2P-6:G
Manufacturer:
MICRON
Quantity:
20 000
Table 18:
PDF: 09005aef80725c0b/Source: 09005aef806fc13c
64MSDRAM_2.fm - Rev. M 10/07 EN
AC Characteristics
Parameter
Access time from CLK
(positive edge)
Address hold time
Address setup time
CLK high-level width
CLK low-level width
Clock cycle time
CKE hold time
CKE setup time
CS#, RAS#, CAS#, WE#, DQM hold
time
CS#, RAS#, CAS#, WE#, DQM setup
time
Data-in hold time
Data-in setup time
Data-out High-Z time
Data-out Low-Z time
Data-out hold time (load)
Data-out hold time (no load)
ACTIVE-to-PRECHARGE command
ACTIVE-to-ACTIVE command period
ACTIVE-to-READ or WRITE delay
Refresh period (4,096 rows)
AUTO REFRESH period
PRECHARGE command period
ACTIVE bank a to ACTIVE bank b
command
Transition time
WRITE recovery time
Exit SELF REFRESH-to-ACTIVE
command
Electrical Characteristics and Recommended AC Operating Conditions
Notes 5, 6, 8, 9, 11, 34 apply to entire table; notes appear on pages 48 and 49; V
CL = 3
CL = 2
CL = 3
CL = 2
CL = 3
CL = 2
Symbol
t
t
t
t
t
t
t
t
t
t
AC(3)
AC(2)
CK(3)
CK(2)
HZ(3)
HZ(2)
t
t
t
t
t
t
CMH
OHN
t
t
t
t
t
t
CKH
CMS
RCD
RRD
t
t
RAS
t
t
CKS
RFC
t
XSR
t
REF
WR
AH
DH
OH
CH
AS
DS
RC
RP
t
CL
LZ
T
1 CLK
+ 6ns
Min
1.5
2.5
2.5
1.5
1.5
1.5
1.8
0.3
42
60
18
60
18
12
12
70
1
6
1
1
1
1
2
-6
120,000
Max
46
5.5
5.5
1.2
64
1 CLK
+ 7ns
Min
0.8
1.5
2.5
2.5
7.5
0.8
1.5
0.8
1.5
0.8
1.5
1.8
0.3
37
60
15
66
15
14
14
67
Micron Technology, Inc., reserves the right to change products or specifications without notice.
7
1
3
-7E
120,000
Max
5.4
5.4
5.4
5.4
1.2
64
+ 7.5ns
1 CLK
64Mb: x4, x8, x16 SDRAM
Min
0.8
1.5
2.5
2.5
7.5
0.8
1.5
0.8
1.5
0.8
1.5
1.8
0.3
10
66
20
15
44
20
66
15
75
1
3
Electrical Specifications
-75
DD
120,000
©2000 Micron Technology, Inc. All rights reserved.
Max
, V
5.4
5.4
1.2
64
6
6
DD
Q = +3.3V ±0.3V
Units
ms
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Notes
27
23
23
10
10
28
24
25
20
7

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