HS1-6664RH/PROTO Intersil, HS1-6664RH/PROTO Datasheet

HS1-6664RH/PROTO

Manufacturer Part Number

HS1-6664RH/PROTO

Description

Manufacturer

Intersil

Datasheet

1.HS1-6664RHPROTO.pdf (5 pages)

Specifications of HS1-6664RH/PROTO

Density

64Kb

Organization

8Kx8

Access Time (max)

35(Typ)ns

Operating Current

15mA

Interface Type

Parallel

Package Type

SBCDIP

Operating Temperature Classification

Military

Operating Supply Voltage (typ)

Operating Temp Range

-55C to 125C

Pin Count

Mounting

Through Hole

Lead Free Status / RoHS Status

Compliant

Current page: 1 of 5
Download datasheet (253Kb)

Radiation Hardened 8kx8 CMOS PROM

The Intersil HS-6664RH is a radiation hardened 64k CMOS

PROM, organized in an 8k word by 8-bit format. The chip is

manufactured using a radiation hardened CMOS process,

and utilizes synchronous circuit design techniques to

achieve high speed performance with very low power

dissipation.

On-chip address latches are provided, allowing easy

interfacing with microprocessors that use a multiplexed

address/data bus structure. The output enable control (G)

simplifies system interfacing by allowing output data bus

control in addition to the chip enable control (E). All bits are

manufactured storing a logical “0” and can be selectively

programmed for a logical “1” at any bit location.

Applications for the HS-6664RH CMOS PROM include low

power microprocessor based instrumentation and

communications systems, remote data acquisition and

processing systems, and processor control storage.

Specifications for Rad Hard QML devices are controlled

by the Defense Supply Center in Columbus (DSCC). The

SMD numbers listed here must be used when ordering.

Detailed Electrical Specifications for these devices are

contained in SMD 5962-95626. A “hot-link” is provided

on our homepage for downloading.

www.intersil.com/spacedefense/space.htm

Ordering Information

5962F9562601QXC

5962F9562601QYC

5962F9562601VXC

5962F9562601VYC

HS1-6664RH/PROTO

HS9-6664RH/PROTO

ORDERING NUMBER

HS1-6664RH-8

HS9-6664RH-8

HS1-6664RH-Q

HS9-6664RH-Q

HS1-6664RH/PROTO

HS9-6664RH/PROTO

MKT. NUMBER

INTERNAL

1-888-INTERSIL or 321-724-7143

Data Sheet

TEMP. RANGE

-55 to 125

(

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.

Intersil and Design is a trademark of Intersil Corporation.

Features

• Electrically Screened to SMD # 5962-95626

• QML Qualified per MIL-PRF-38535 Requirements

• 1.2 Micron Radiation Hardened Bulk CMOS

• Total Dose . . . . . . . . . . . . . . . . . . . . . . 300 krad(Si) (Max)

• Transient Output Upset . . . . . . . . . . . . . . >5x10

• LET >100 MEV-cm

• Fast Access Time. . . . . . . . . . . . . . . . . . . . . . . 35ns (Typ)

• Single 5V Power Supply

• Single Pulse 10V Field Programmable

• Synchronous Operation

• On-Chip Address Latches

• Three-State Outputs

• NiCr Fuses

• Low Standby Current . . . . . . . . . . . . . . <500μA (Pre-Rad)

• Low Operating Current. . . . . . . . . . . . . . . . . . <15mA/MHz

• Military Temperature Range. . . . . . . . . . . -55

August 2000

/mg

File Number

HS-6664RH

C to 125

3197.4

rad(Si)/s

Related parts for HS1-6664RH/PROTO

HS1-6664RH/PROTO Summary of contents

Page 1

... MKT. NUMBER 5962F9562601QXC HS1-6664RH-8 5962F9562601QYC HS9-6664RH-8 5962F9562601VXC HS1-6664RH-Q 5962F9562601VYC HS9-6664RH-Q HS1-6664RH/PROTO HS1-6664RH/PROTO HS9-6664RH/PROTO HS9-6664RH/PROTO 1 1-888-INTERSIL or 321-724-7143 August 2000 Features • Electrically Screened to SMD # 5962-95626 • QML Qualified per MIL-PRF-38535 Requirements • 1.2 Micron Radiation Hardened Bulk CMOS • Total Dose . . . . . . . . . . . . . . . . . . . . . . 300 krad(Si) (Max) • ...

Page 2

Pinouts 28 LEAD CERAMIC (SBDIP) CASE OUTLINE D28.6 MIL-STD-1835, CDIP2-T28 TOP VIEW A12 DQ0 12 DQ1 13 DQ2 14 GND ...

Page 3

... A12 A11 A10 DQ7 10 19 DQ0 DQ6 18 11 DQ1 DQ5 12 17 DQ2 DQ4 13 16 VSS DQ3 14 15 VDD = GND HS1-6664RH 28 LEAD (8kx8 PROM DIP) NC VDD A12 A11 A10 DQ7 10 19 DQ0 DQ6 11 18 DQ1 DQ5 17 12 DQ2 DQ4 13 16 VSS ...

Page 4

Die Characteristics DIE DIMENSIONS: 271milsx307milsx19mils ±1mils INTERFACE MATERIALS: Glassivation: Type: SiO 2 Å Å ± 1k Thickness: 8k Top Metallization: Å Å M1:6k ±±1k Si/Al/Cu Å Å 2k ±±500 TiW Å Å ± 2k M2:10k Si/Al/Cu Metallization Mask Layout 4 ...

Page 5

... Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use ...

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