MC9S12DG128CPVE Freescale, MC9S12DG128CPVE Datasheet - Page 100

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MC9S12DG128CPVE

Manufacturer Part Number
MC9S12DG128CPVE
Description
Manufacturer
Freescale
Datasheet

Specifications of MC9S12DG128CPVE

Cpu Family
HCS12
Device Core Size
16b
Frequency (max)
50MHz
Interface Type
SCI/SPI/I2C/CAN
Total Internal Ram Size
8KB
# I/os (max)
91
Number Of Timers - General Purpose
8
Operating Supply Voltage (typ)
2.5/5V
Operating Supply Voltage (max)
2.75/5.25V
Operating Supply Voltage (min)
2.25/2.35/4.5V
On-chip Adc
2(8-chx10-bit)
Instruction Set Architecture
CISC
Operating Temp Range
-40C to 85C
Operating Temperature Classification
Industrial
Mounting
Surface Mount
Pin Count
112
Package Type
LQFP
Program Memory Type
Flash
Program Memory Size
128KB
Lead Free Status / RoHS Status
Compliant

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Device User Guide — 9S12DT128DGV2/D V02.16
A device will be defined as a failure if after exposure to ESD pulses the device no longer meets the device
specification. Complete DC parametric and functional testing is performed per the applicable device
specification at room temperature followed by hot temperature, unless specified otherwise in the device
specification.
A.1.7 Operating Conditions
This chapter describes the operating conditions of the device. Unless otherwise noted those conditions
apply to all the following data.
100
NOTE:
Num C
1
2
3
4
5
Human Body
Machine
Latch-up
Model
C Human Body Model (HBM)
C Machine Model (MM)
C Charge Device Model (CDM)
C
C
Please refer to the temperature rating of the device (C, V, M) with regards to the
ambient temperature T
Latch-up Current at 125 C
positive
negative
Latch-up Current at 27 C
positive
negative
Table A-3 ESD and Latch-Up Protection Characteristics
Series Resistance
Storage Capacitance
Number of Pulse per pin
positive
negative
Series Resistance
Storage Capacitance
Number of Pulse per pin
positive
negative
Minimum input voltage limit
Maximum input voltage limit
Table A-2 ESD and Latch-up Test Conditions
Rating
A
Description
and the junction temperature T
Symbol
V
V
V
I
I
HBM
CDM
LAT
LAT
MM
Symbol
J
. For power dissipation
R1
R1
C
C
2000
+100
–100
+200
–200
Min
200
500
Freescale Semiconductor
Value
1500
–2.5
100
200
7.5
3
3
0
3
3
Max
Unit
Ohm
Ohm
pF
pF
V
V
Unit
mA
mA
V
V
V

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