MC9S12DG128CPVE Freescale, MC9S12DG128CPVE Datasheet - Page 112

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MC9S12DG128CPVE

Manufacturer Part Number
MC9S12DG128CPVE
Description
Manufacturer
Freescale
Datasheet

Specifications of MC9S12DG128CPVE

Cpu Family
HCS12
Device Core Size
16b
Frequency (max)
50MHz
Interface Type
SCI/SPI/I2C/CAN
Total Internal Ram Size
8KB
# I/os (max)
91
Number Of Timers - General Purpose
8
Operating Supply Voltage (typ)
2.5/5V
Operating Supply Voltage (max)
2.75/5.25V
Operating Supply Voltage (min)
2.25/2.35/4.5V
On-chip Adc
2(8-chx10-bit)
Instruction Set Architecture
CISC
Operating Temp Range
-40C to 85C
Operating Temperature Classification
Industrial
Mounting
Surface Mount
Pin Count
112
Package Type
LQFP
Program Memory Type
Flash
Program Memory Size
128KB
Lead Free Status / RoHS Status
Compliant

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Device User Guide — 9S12DT128DGV2/D V02.16
The setup time can be ignored for this operation.
A.3.1.4 Mass Erase
Erasing a NVM block takes:
The setup time can be ignored for this operation.
A.3.1.5 Blank Check
The time it takes to perform a blank check on the Flash or EEPROM is dependant on the location of the
first non-blank word starting at relative address zero. It takes one bus cycle per word to verify plus a setup
of the command.
Conditions are shown in (Table A-4) unless otherwise noted
Num C
NOTES:
1. Restrictions for oscillator in crystal mode apply!
2. Minimum Programming times are achieved under maximum NVM operating frequency f
3. Maximum Erase and Programming times are achieved under particular combinations of f
4. Row Programming operations are not applicable to EEPROM
5. Minimum Erase times are achieved under maximum NVM operating frequency f
6. Minimum time, if first word in the array is not blank
7. Maximum time to complete check on an erased block
10
112
1
2
3
4
5
6
7
8
9
f
Refer to formulae in Sections Section A.3.1.1 Single Word Programming- Section A.3.1.4 Mass Erasefor guidance.
bus
.
D External Oscillator Clock
D Bus frequency for Programming or Erase Operations
D Operating Frequency
D Flash Row Programming consecutive word
D Flash Row Programming Time for 32 Words
D Blank Check Time Flash per block
D Blank Check Time EEPROM per block
P Single Word Programming Time
P Sector Erase Time
P Mass Erase Time
Rating
Table A-11 NVM Timing Characteristics
t
check
t
mass
t
era
location t
4
(4)
4000
20000
Symbol
---------------------
f
f
f
NVMOSC
NVMBUS
f
NVMOP
t
cyc
t
NVMOP
t
t
t
swpgm
bwpgm
t
brpgm
check
check
---------------------
f
mass
t
era
NVMOP
1
+
1
10 t
678.4
20.4
100
11
Min
46
20
11
150
0.5
NVMOP
1
cyc
(6)
2
5
6
(5)
(2)
(2)
NVMOP
.
NVMOP
Typ
Freescale Semiconductor
and maximum bus frequency
and bus frequency f
1035.5
32778
26.7
1034
133
74.5
31
Max
50
200
(3)
1
(3)
(3)
(7)
3
(3)
7
bus
Unit
MHz
MHz
kHz
t
t
ms
ms
cyc
cyc
.
s
s
s

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