BSM50GD120DLC Infineon Technologies, BSM50GD120DLC Datasheet

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BSM50GD120DLC

Manufacturer Part Number
BSM50GD120DLC
Description
IGBT Modules 1200V 50A 3-PHASE
Manufacturer
Infineon Technologies
Datasheet
1.BSM50GD120DLC.pdf (9 pages)

Specifications of BSM50GD120DLC

Configuration
Hex
Channel Type
N
Collector-emitter Voltage
1.2kV
Collector Current (dc) (max)
85A
Gate To Emitter Voltage (max)
±20V
Mounting
Screw
Operating Temperature (min)
-40C
Operating Temperature (max)
125C
Operating Temperature Classification
Automotive
Collector- Emitter Voltage Vceo Max
1200 V
Collector-emitter Saturation Voltage
2.4 V
Continuous Collector Current At 25 C
85 A
Gate-emitter Leakage Current
400 nA
Power Dissipation
350 W
Maximum Operating Temperature
+ 125 C
Maximum Gate Emitter Voltage
+/- 20 V
Minimum Operating Temperature
- 40 C
Mounting Style
Screw
Package / Case
EconoPACK 2A
Lead Free Status / RoHS Status
Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
BSM50GD120DLC
Manufacturer:
Infineon Technologies
Quantity:
135
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
BSM50GD120DLC
Quantity:
560
Company:
HONG KONG JIETUO ZIJING INTERNATIONAL TRADING CO., LIMITED HONG KONG JIETUO ZIJING INTERNATIONAL TRADING CO., LIMITED
Part Number:
BSM50GD120DLC
Quantity:
50
Kollektor-Emitter-Sperrspannung
collector-emitter voltage
Kollektor-Dauergleichstrom
DC-collector current
Periodischer Kollektor Spitzenstrom
repetitive peak collector current
Gesamt-Verlustleistung
total power dissipation
Gate-Emitter-Spitzenspannung
gate-emitter peak voltage
Dauergleichstrom
DC forward current
Periodischer Spitzenstrom
repetitive peak forw. current
Grenzlastintegral der Diode
I
Isolations-Prüfspannung
insulation test voltage
Kollektor-Emitter Sättigungsspannung
collector-emitter saturation voltage
Gate-Schwellenspannung
gate threshold voltage
Gateladung
gate charge
Eingangskapazität
input capacitance
Rückwirkungskapazität
reverse transfer capacitance
Kollektor-Emitter Reststrom
collector-emitter cut-off current
Gate-Emitter Reststrom
gate-emitter leakage current
prepared by: Mark Münzer
approved by: M. Hierholzer
IGBT-Module
IGBT-Modules
Höchstzulässige Werte / Maximum rated values
Elektrische Eigenschaften / Electrical properties
Charakteristische Werte / Characteristic values
Transistor / Transistor
Technische Information / Technical Information
2
t - value, Diode
T
T
t
T
t
V
RMS, f = 50 Hz, t = 1 min.
I
I
I
f = 1MHz,T
f = 1MHz,T
V
V
V
date of publication: 2006-01-31
revision: 4
BSM50GD120DLC
P
P
C
C
C
V
C
C
C
R
CE
CE
CE
= 1 ms, T
= 1 ms
GE
=25°C, Transistor
= 50A, V
= 50A, V
= 2mA, V
= 80 °C
= 25 °C
= 0V, t
= 1200V, V
= 1200V, V
= 0V, V
= -15V...+15V
p
vj
vj
GE
GE
= 10ms, T
C
CE
GE
= 25°C,V
= 25°C,V
= 80°C
= 15V, T
= 15V, T
= V
= 20V, T
GE
GE
GE
= 0V, T
= 0V, T
, T
Vj
CE
CE
vj
vj
vj
vj
= 125°C
= 25°C
= 125°C
= 25V, V
= 25V, V
= 25°C
= 25°C
vj
vj
1(8)
= 25°C
= 125°C
GE
GE
= 0V
= 0V
V
I
V
V
V
V
C,nom.
I
I
I
C
C
I
P
CRM
CE sat
GE(th)
Q
FRM
CES
GES
I
ISOL
CES
I
GES
I
2
C
ies
res
tot
F
G
t
min.
4,5
-
-
-
-
-
-
-
-
+/- 20V
1200
typ.
0,53
0,21
100
350
100
430
200
2,5
2,1
2,4
5,5
3,3
50
85
50
2
-
Seriendatenblatt_BSM50GD120DLC.xls
max.
400
2,6
2,9
6,5
84
-
-
-
-
A
kV
nF
nF
nA
W
V
A
A
A
V
A
A
V
V
V
2
C
A
A
s

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BSM50GD120DLC Summary of contents

Page 1

... date of publication: 2006-01-31 revision: 4 1(8) V 1200 V CES C,nom 100 A CRM P 350 W tot V +/- 20V V GES 100 A FRM 2 2 430 2,5 kV ISOL min. typ. max 2,1 2 sat - 2,4 2 4,5 5,5 6,5 V GE( ies res CES - 200 - 400 nA GES Seriendatenblatt_BSM50GD120DLC.xls ...

Page 2

... E - 6,4 - mWs 6,2 - mWs off I - 400 - sCE CC‘+EE‘ min. typ. max 1,8 2 1,7 2 5,1 - µ 10,7 - µ 1,9 - mWs rec - 4 - mWs Seriendatenblatt_BSM50GD120DLC.xls ...

Page 3

... This technical information specifies semiconductor devices but promises no characteristics valid in combination with the belonging technical notes. BSM50GD120DLC Transistor / transistor, DC Diode/Diode, DC pro Modul / per module = Paste grease terminals M6 3(8) min. typ. max 0,35 K/W thJC - - 0,7 K 0,02 - K/W thCK 150 ° -40 - 125 ° -40 - 150 °C stg 225 180 g Seriendatenblatt_BSM50GD120DLC.xls ...

Page 4

... Ausgangskennlinienfeld (typisch) Output characteristic (typical) 100 90 VGE = 17V 80 VGE = 15V VGE = 13V 70 VGE = 11V VGE = 9V 60 VGE = 0,0 0,5 1,0 BSM50GD120DLC 15V GE 1,5 2,0 2 1,5 2,0 2,5 3,0 3,5 V [ 3,0 3,5 4 125°C vj 4,0 4,5 5,0 Seriendatenblatt_BSM50GD120DLC.xls ...

Page 5

... Technische Information / Technical Information IGBT-Module IGBT-Modules Übertragungscharakteristik (typisch) Transfer characteristic (typical) 100 Durchlaßkennlinie der Inversdiode (typisch) Forward characteristic of inverse diode (typical) 100 0,0 0,5 BSM50GD120DLC 20V 25° 125° [ 25° 125°C 1,0 1,5 2,0 V [ 2,5 3,0 Seriendatenblatt_BSM50GD120DLC.xls ...

Page 6

... Technische Information / Technical Information IGBT-Module IGBT-Modules Schaltverluste (typisch) Switching losses (typical Eoff Eon 14 Erec Schaltverluste (typisch) Switching losses (typical) 28 Eoff 24 Eon Erec BSM50GD120DLC off C V =15V 600V gon goff [ off V =15V , I = 50A , V = 600V , 100 6( rec C = 125° 100 ) , rec G = 125°C j 120 140 Seriendatenblatt_BSM50GD120DLC.xls ...

Page 7

... IC,Modul IC,Chip 200 BSM50GD120DLC Z thJC 0 [sec 68,32 229,97 0,009 0,045 41,46 305,3 0,003 0,022 V = 15V 400 600 800 1000 V [ (t) Zth:Diode Zth:IGBT 10 100 3 4 18,25 33,46 0,073 0,229 271,51 81,73 0,064 0,344 = 15 Ohm 125° 1200 1400 Seriendatenblatt_BSM50GD120DLC.xls ...

Page 8

... Technische Information / Technical Information IGBT-Module IGBT-Modules Gehäusemaße / Schaltbild Package outline / Circuit diagram BSM50GD120DLC 8(8) Seriendatenblatt_BSM50GD120DLC ...

Page 9

Nutzungsbedingungen Die in diesem Produktdatenblatt enthaltenen Daten sind ausschließlich für technisch geschultes Fachpersonal bestimmt. Die Beurteilung der Geeignetheit dieses Produktes für die von Ihnen anvisierte Anwendung sowie die Beurteilung der Vollständigkeit der bereitgestellten Produktdaten für diese Anwendung obliegt Ihnen bzw. ...

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