BSM50GD120DLC Infineon Technologies, BSM50GD120DLC Datasheet - Page 6

• Manufacturer Part Number: BSM50GD120DLC
• Description: IGBT Modules 1200V 50A 3-PHASE
• Manufacturer: Infineon Technologies

Specifications of BSM50GD120DLC

• Configuration: Hex
• Channel Type: N
• Collector-emitter Voltage: 1.2kV
• Collector Current (dc) (max): 85A
• Gate To Emitter Voltage (max): ±20V
• Mounting: Screw
• Operating Temperature (min): -40C
• Operating Temperature (max): 125C
• Operating Temperature Classification: Automotive
• Collector- Emitter Voltage Vceo Max: 1200 V
• Collector-emitter Saturation Voltage: 2.4 V
• Continuous Collector Current At 25 C: 85 A
• Gate-emitter Leakage Current: 400 nA
• Power Dissipation: 350 W
• Maximum Operating Temperature: + 125 C
• Maximum Gate Emitter Voltage: +/- 20 V
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Package / Case: EconoPACK 2A
• Lead Free Status / RoHS Status: Compliant

IGBT-Module
IGBT-Modules
Technische Information / Technical Information
28
24
20
16
12
18
16
14
12
10
8
4
0
8
6
4
2
0
Schaltverluste (typisch)
Switching losses (typical)
0
0
Schaltverluste (typisch)
Switching losses (typical)
10
20
20
Eoff
Eon
Erec
Eoff
Eon
Erec
40
BSM50GD120DLC
30
V
E
GE
on
=15V, R
40
= f (I
60
V
E
gon
GE
R
I
C
on
C
=15V , I
G
) , E
= R
50
[A]
[ ]
= f (R
6(8)
goff
off
= 15
C
80
= 50A , V
= f (I
G
60
) , E
, V
CE
C
CE
off
) , E
= 600V, T
= 600V , T
= f (R
70
100
rec
= f (I
j
= 125°C
G
j
= 125°C
) , E
80
C
)
rec
120
= f (R
90
G
)
Seriendatenblatt_BSM50GD120DLC.xls
140
100